Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34450
標題: (Journal of Vacuum Science and Technology B, 87:388-390)MBE growth of high-quality two-dimensional electron system
作者: M. Shayegan
L.W. Engel
V.J. Goldman
M.B. Santos
Y.W. Suen
T. Sajoto
關鍵字: CRYSTAL DOPING
MODULATION
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
RANDOMNESS
MOLECULAR BEAM EPITAXY
LAYERS
CHEMICAL COMPOSITION
SILICON
ELECTRON MOBILITY
HETEROSTRUCTURES
MONOCRYSTALS
THIN FILMS
出版社: USA:Published for the Society by the American Institute of Physics
URI: http://hdl.handle.net/11455/34450
ISSN: 1071-1023
Appears in Collections:奈米科學研究所

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