Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34808
標題: Novel preparation and photoelectrochemical properties of gamma-CuI semiconductor nanocrystallites on screen-printed carbon electrodes
作者: Hsu, C.T.
曾志明
Chung, H.H.
Kumar, A.S.
Zen, J.M.
關鍵字: semiconductor nanocrystallites
copper(I) iodide
photoelectrochemical
response
screen-printed electrode
hybrid electrochemical/chemical synthesis
glassy-carbon
cells
films
nanoparticles
deposition
dynamics
期刊/報告no:: Electroanalysis, Volume 17, Issue 20, Page(s) 1822-1827.
摘要: Cuprous iodide (gamma-CuI) is an important semiconductor material having a bang gap of 3.1 eV often used for visible light assisted photoelectrochemical and solar energy conservation systems. We report the first and unique preparation of fine and precisely controlled gamma-CuI semiconductor nanocrystallites on the surface of a screen-printed carbon electrode using a photoelectrochemical copper nanoparticle deposition method with tris(hydroxymethyl)aminomethane (Tris) buffer solution as a control medium. Tris buffer helps to split (Cu2O)-O-1 and COO oxidation states through specific complexation mechanism and in turn to selective iodination of (Cu2O)-O-1 to the formation of gamma-CuI on the electrode. Stable and linear photoelectrochemical response was further demonstrated against variable light intensity up to 400 Klux using the gamma-CuI modified system.
URI: http://hdl.handle.net/11455/34808
ISSN: 1040-0397
文章連結: http://dx.doi.org/10.1002/elan.200503320
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