Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/35144
標題: The properties of AlGaN films and AlGaN/GaN heterostructures grown on (11(2)over-bar0) sapphire substrates
作者: Liao, W.T.
林寬鋸
Gong, J.R.
Lin, S.W.
Wang, C.L.
Chen, K.C.
Shi, J.B.
Chang, S.Y.
Lin, K.J.
龔志榮
關鍵字: a-plane sapphire
light
diodes
期刊/報告no:: Journal of Materials Science-Materials in Electronics, Volume 17, Issue 10, Page(s) 847-850.
摘要: AlxGa1-xN films and AlxGa1-xN/GaN heterostructures were prepared on the (11 (2) over bar0) sapphire substrates at elevated temperatures by alternate supply of trimethylgallium (TMG)/trimethylaluminum (TMA) and ammonia (NH3) in an inductively heated quartz reactor. X-ray studies reveal the monocrystalline nature of these Al-containing structures. The results of absorption measurements of the AlxGa1-xN films exhibit clear cut-off energies of the films. Based on the investigations of transmission electron microscopy (TEM), AlxGa1-xN films and AlxGa1-xN/GaN structures were found to deposit on the ( 11 (2) over bar0) sapphire substrates with < 0001 >(AlGaN) and <1<(1)over bar>00>(AlGaN) being parallel to < 11 (2) over bar0 >(sapphire) and <1<(1)over bar>00>(sapphire), respectively.
URI: http://hdl.handle.net/11455/35144
ISSN: 0957-4522
文章連結: http://dx.doi.org/10.1007/s10854-006-0033-0
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