Please use this identifier to cite or link to this item:
|標題:||Structural characteristics of ZnO films grown on (0001) or (11-20) sapphire substrates by atomic layer deposition|
|摘要:||The structural characteristics of zinc oxide (ZnO) films deposited on the (0001)- or (11-20)-oriented sapphire substrates were investigated. ZnO films having low temperature ZnO buffer layers were prepared by atomic layer deposition using diethylzinc and nitrous oxide. The ZnO films were analyzed using cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy and x-ray diffractometry. Cross-sectional high-resolution transmission electron microscopic observations showed the presence of extrinsic stacking faults along with Frankel partial dislocations in ZnO near the ZnO/sapphire heterointerface. Based on the results of cross-sectional transmission electron microscopic observations and double-crystal x-ray rocking curve measurements, it was found that buffer-layer annealing treatment tended to reduce the density of threading dislocations in a ZnO film efficiently so that the crystalline quality of the film was greatly improved. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3523289]|
|Appears in Collections:||物理學系所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.