Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36550
標題: Nanomeasurements of electronic and mechanical properties of fullerene embedded Si(111) surfaces
作者: Huang, C.P.
何孟書
Su, C.C.
Su, W.S.
Hsu, C.F.
Ho, M.S.
關鍵字: adhesion
atomic force microscopy
electron field emission
elemental
semiconductors
energy gap
fullerenes
hardness
nanofabrication
nanostructured materials
scanning tunnelling microscopy
self-assembly
silicon
surface states
viscoelasticity
scanning-tunneling-microscopy
carbide single-crystals
carbon nanotube
films
field-emission
c-60
growth
c-84
期刊/報告no:: Applied Physics Letters, Volume 97, Issue 6.
摘要: This study describes the feasibility of fabricating of a single layer of fullerene embedded Si surface through a controlled self-assembly mechanism in an ultrahigh vacuum (UHV) chamber. The characteristics of the fullerene embedded Si surface are investigated directly using UHV-scanning probe microscopy. Additionally, the band gap energy and field emission parameters, including turn-on field and the field enhancement factor beta of the fullerene embedded Si substrate, are determined using a high-voltage source measurement unit and UHV-scanning tunneling microscopy, respectively. Moreover, the nanomechanical properties, which represent the stress of the fullerene embedded Si substrates, are assessed by an environment atomic force microscope (AFM) and UHV-AFM, respectively. Results of this study demonstrate that a single layer of the fullerene embedded surface has superior properties for nanotechnology applications owing to the ability to control the self-assembly mechanism of fabrication. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475775]
URI: http://hdl.handle.net/11455/36550
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.3475775
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