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|標題:||Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor|
|期刊/報告no：:||Applied Physics Letters, Volume 90, Issue 3.|
|摘要:||The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented. (c) 2007 American Institute of Physics.|
|Appears in Collections:||物理學系所|
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