Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36601
標題: Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor
作者: 郭華丞
Lin, M.C.
Aravind, K.
Wu, C.S.
Wu, Y.P.
Kuan, C.H.
Kuo, W.
Chen, C.D.
關鍵字: spectroscopy
atoms
期刊/報告no:: Applied Physics Letters, Volume 90, Issue 3.
摘要: The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented. (c) 2007 American Institute of Physics.
URI: http://hdl.handle.net/11455/36601
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.2431565
Appears in Collections:物理學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.