Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36628
標題: Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates
作者: Liao, W.T.
龔志榮
Gong, J.R.
Wang, C.L.
Wang, W.L.
Tsuei, C.C.
Lee, C.Y.
Chen, K.C.
Ho, J.R.
Luo, R.C.
關鍵字: light-emitting-diodes
molecular-beam epitaxy
laser-diodes
thin-films
gan
dislocations
layers
algan
期刊/報告no:: Electrochemical and Solid State Letters, Volume 10, Issue 1, Page(s) H5-H7.
摘要: We report a comparative study on the performance of InGaN/AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c- plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11455/36628
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.2364379
Appears in Collections:物理學系所

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