Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36644
標題: Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O
作者: Lin, P.Y.
龔志榮
Gong, J.R.
Li, P.C.
Lin, T.Y.
Lyu, D.Y.
Lin, D.Y.
Lin, H.J.
Li, T.C.
Chang, K.J.
Lin, W.J.
關鍵字: surface structure
X-ray diffraction
atomic layer deposition
zinc
oxides
photoluminescence
semiconducting II-VI materials
molecular-beam epitaxy
thin-films
ultraviolet
pressure
green
期刊/報告no:: Journal of Crystal Growth, Volume 310, Issue 12, Page(s) 3024-3028.
摘要: Zinc oxide (ZnO) films were grown at 600 degrees C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the 0 to 20 X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with < 0 0 0 1 > (znO) being parallel to the < 0 0 0 1 > (sapphire). Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (D degrees X) emission as well as phomon replicas of free A-excitons in the 10 K PL. spectrum. (c) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/36644
ISSN: 0022-0248
文章連結: http://dx.doi.org/10.1016/j.jcrysgro.2008.03.016
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