Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36645
標題: Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes
作者: 龔志榮
Wang, C.L.
Tsai, M.C.
Gong, J.R.
Liao, W.T.
Lin, P.Y.
Yen, K.Y.
Chang, C.C.
Lin, H.Y.
Hwang, S.K.
關鍵字: InGaN/GaN MQW
light-emitting diode (LED)
short-period superlattice
(SPSL)
molecular-beam epitaxy
gan
diffusion
layers
期刊/報告no:: Materials Science and Engineering B-Solid State Materials for Advanced Technology, Volume 138, Issue 2, Page(s) 180-183.
摘要: Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/36645
ISSN: 0921-5107
文章連結: http://dx.doi.org/10.1016/j.mseb.2007.01.005
Appears in Collections:物理學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.