Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36650
標題: Deposition of AlGaN films on (111)Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers
作者: 龔志榮
Wang, C.L.
Gong, J.R.
Liao, W.T.
Lin, C.K.
Lin, T.Y.
關鍵字: nitrides
semiconductors
deposition process
optical properties
light-emitting-diodes
si(111)
blue
aln
transistors
stress
movpe
期刊/報告no:: Thin Solid Films, Volume 493, Issue 1-2, Page(s) 135-138.
摘要: AlxGa1-xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800 similar to 1000 degrees C. It was found that crack free AlxGa1-xN films were achieved when the films were grown at 800 degrees C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 degrees C grown AlxGa1-xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 degrees C grown 180 nm-thick Al0.58Ga0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1-xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/36650
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2005.08.004
Appears in Collections:物理學系所

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