Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36656
標題: Performance of InGaN/GaN MQW LEDs Using Ga-Doped ZnO TCLs Prepared by ALD
作者: Yen, Kuo-Yi
Chiu, Chien-Hua
Li, Chun-Wei
Chou, Chien-Hua
Lin, Pei-Shin
Chen, Tzu-Pei
Lin, Tai-Yuan
Gong, Jyh-Rong
關鍵字: ALD
GZO
InGaN/GaN multiple quantum well (MQW) light emitting diode (LED)
ohmic contact
transparent conducting layer (TCL)
摘要: Heavily Ga-doped ZnO (n+-GZO) films prepared by atomic layer deposition were used as transparent conducting layers (TCLs) on InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs). It was found that N2-annealed n+-GZO-coated InGaN/GaN MQW LEDs exhibited reduced forward voltage and enhanced light extraction under certain conditions. A forward voltage of 3.1 V at 20 mA was achieved for a 400 °C N2-annealed n+-GZO-coated InGaN/GaN MQW LED with a specific contact resistance of the n+-GZO on p-GaN contact being 4.1 × 10−3 cm2. Compared to the same InGaN/GaN MQW LED structure with a commercialgrade indium tin oxide (ITO) TCL, the 400 °C N2-annealed n+-GZO-coated InGaN/GaN MQW LED shows an increment of light output power by 15% at 20 mA. It is believed that the enhanced light extraction of the n+-GZO-coated InGaN/GaN MQW LED is a consequence of a higher refractive index of n+-GZO than that of ITO.
URI: http://hdl.handle.net/11455/36656
ISSN: 1041–1135
文章連結: http://dx.doi.org/10.1109/LPT.2012.2220537
Appears in Collections:物理學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.