Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36690
標題: (Journal of Applied Physics,92(7):3717-3723)Energy band structure of strained Si 1-x C x alloys on Si(001) substrate
作者: S. T. Chang
C. Y. Lin
C. W. Liu
關鍵字: silicon compounds
silicon
elemental semiconductors
wide band gap semiconductors
LCAO calculations
spin-orbit interactions
bond lengths
bond angles
effective mass
interface states
energy gap
出版社: New York,USA:American Institute of Physics
URI: http://hdl.handle.net/11455/36690
Appears in Collections:物理學系所

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