Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36717
標題: (Japanese Journal of Applied Physics,46(4B):2107-2111)Impact of Source/Drain Si1 yCy Stressors on Silicon-on-Insulator N-type Metal-Oxide-Semiconductor Field-Effect Transistors
作者: Chung-Yi Lin
Shu-Tong Chang
Jacky Huang
Wei-Ching Wang
Jun-Wei Fan
關鍵字: strained Si
mobility
SiC
stressor
出版社: Toyama,Japan:The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/36717
Appears in Collections:物理學系所

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