Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39847
標題: Exploring the effect of width on performance enhancement in NMOSFETs with a silicon-carbon alloy stressor and a tensile stress silicon nitride liner
作者: Chang, S.T.
張書通
Wang, W.C.
Huang, J.
Liao, S.H.
Lin, C.Y.
關鍵字: silicon-carbon alloy
stress
mobility
MOSFET
mosfets
期刊/報告no:: Applied Surface Science, Volume 254, Issue 19, Page(s) 6177-6181.
摘要: The stress distribution in the Si channel regions of a SiC source/drain and stressed silicon nitride liner NMOSFETs with various widths were studied using 3D simulations. The mobility enhancement was found to be dominated by the tensile stress along the transport direction. Stress along the width direction was found to have the least effect on the drain current. The compressive stress along the vertical direction perpendicular to the gate oxide (Szz) contributes significantly to the mobility enhancement and cannot be neglected in NMOSFETs with a width between 0.05 and 1 mm. The impact of width on performance improvements such as the drive current gain was also analyzed. (C) 2008 Elsevier B. V. All rights reserved.
URI: http://hdl.handle.net/11455/39847
ISSN: 0169-4332
文章連結: http://dx.doi.org/10.1016/j.apsusc.2008.02.173
Appears in Collections:光電工程研究所

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