Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39883
標題: Comprehensive study of the Raman shifts of strained silicon and germanium
作者: Peng, C.Y.
張書通
Huang, C.F.
Fu, Y.C.
Yang, Y.H.
Lai, C.Y.
Chang, S.T.
Liu, C.W.
關鍵字: elemental semiconductors
germanium
lattice dynamics
light
polarisation
phonons
Raman spectra
red shift
silicon
spectral line
shift
tensile strength
micro-raman
stress
si
scattering
ge
phonons
diamond
alloys
semiconductors
enhancement
期刊/報告no:: Journal of Applied Physics, Volume 105, Issue 8.
摘要: Raman shifts are investigated on silicon and germanium substrates under the uniaxial tensile strain on various substrate orientations. The strain splits the triply degenerate optical (LO, TO) phonons at the zone center (k approximate to 0). The redshifts of Si Raman peaks induced by the tensile strain on all substrate orientations are observed. With the specific polarization of the incident light, however, the unusual blueshifts of Ge Raman peaks induced by the tensile strain are observed on (110) and (111) Ge substrates. By using the suitable phenomenological constants and taking the Raman selection rules into consideration, the experimental results are in reasonable agreement with the lattice dynamical theory.
URI: http://hdl.handle.net/11455/39883
ISSN: 0021-8979
文章連結: http://dx.doi.org/10.1063/1.3110184
Appears in Collections:光電工程研究所

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