Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39901
DC FieldValueLanguage
dc.contributor.authorChang, S.T.en_US
dc.contributor.author張書通zh_TW
dc.contributor.authorLiao, S.H.en_US
dc.contributor.authorWang, W.C.en_US
dc.contributor.authorLin, C.Y.en_US
dc.contributor.authorFan, J.W.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-06T08:02:52Z-
dc.date.available2014-06-06T08:02:52Z-
dc.identifier.issn0374-4884zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/39901-
dc.description.abstractThe physical mechanisms of electron mobility and ballistic drain current enhancement by stress are investigated. From modified higher-order k . p band calculations, the stress-induced split of the conduction band edge and the effective mass change are quantitatively evaluated. It was experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si NMOSFETs on a (601) wafers is especially warped due to a uniaxial [110] stress, resulting in a lighter transverse effective mass of the 2-fold valleys parallel to the stress. The physical reasons for the warped subband structure and the abnormal mobility enhancement caused by the uniaxial stress are investigated. The rates of variation of the experimental electron mobility in NMOSFETs on wafers with (001) orientations under a < 110 > uniaxial stress as a function of the channel direction is theoretically studied. The limits of electron mobility enhancement and the effectiveness of stress engineering in enhancing the ballistic drain current of NMOSFETs are also discussed.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of the Korean Physical Societyen_US
dc.relation.ispartofseriesJournal of the Korean Physical Society, Volume 53, Issue 2, Page(s) 1024-1029.en_US
dc.subjectuniaxial stressen_US
dc.subjectmobilityen_US
dc.subjectsubbanden_US
dc.subjectself-consistenten_US
dc.subjectballistic currenten_US
dc.subjectfield-effect transistorsen_US
dc.subjectsiliconen_US
dc.subjectgermaniumen_US
dc.titleImpact of stress engineering on the electron mobility and the ballistic current for strained SiNMOSFETsen_US
dc.typeJournal Articlezh_TW
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