Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39918
標題: 3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL
作者: Wang, W.C.
張書通
Chang, S.T.
Huang, J.
Kuang, S.J.
關鍵字: Silicon-carbon alloy
Stress
Mobility
MOSFET
band-structure
mobility
期刊/報告no:: Solid-State Electronics, Volume 53, Issue 8, Page(s) 880-887.
摘要: Stress distributions in the Si channel regions of silicon-based alloy source/drain and stressed silicon nitride liner NMOSFETs with various widths were studied using 3D TCAD simulations. For strained Si NMOS, drive current enhancement was found to be dominated by tensile stress along the transport direction (S(xx)), and compressive stress along the growth direction (S(zz)) in larger width devices. Stress along the width (S(yy)) was found to have the least effect on the drain current in the large width regime. The compressive stress along the vertical direction, perpendicular to the gate oxide (S(zz)), contributes significantly to drive current enhancement and cannot be neglected in NMOSFETs. For strained Si PMOS, it is found that S(xx) contributes most substantially to the improvement in drive current, while S(zz) contributes the least. In the narrow width regime S(yy) noticeably enhances drive current, contributing almost a quarter of the total gain. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/39918
ISSN: 0038-1101
文章連結: http://dx.doi.org/10.1016/j.sse.2009.04.023
Appears in Collections:光電工程研究所

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