Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39925
標題: A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon-carbon alloy stressor
作者: Chang, S.T.
張書通
Wang, W.C.
Lee, C.C.
Huang, J.
關鍵字: Silicon-carbon alloy
Stress
Mobility
Nanoscale MOSFET
TCAD
simulation
期刊/報告no:: Thin Solid Films, Volume 518, Issue 5, Page(s) 1595-1598.
摘要: Stress distributions in the Si channel regions of silicon-carbon source/drain and stressed silicon nitride liner NMOSFETs were studied using the 3D ANSYS simulations. The mobility enhancement was found to be dominated by the tensile stress along the transport direction and compressive stress along the growth direction in wide devices. Stress along the width direction was found to have the least effect on the drain current in wide samples. Stress along the width slightly degraded the mobility gain in the narrow width regime. The compressive stress along the vertical direction, perpendicular to the gate oxide, contributes significantly to mobility enhancement and cannot be neglected in nanoscale NMOSFETs. The impact of width on performance improvements such as mobility gain was also analyzed using TCAD simulations. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39925
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.09.078
Appears in Collections:光電工程研究所

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