Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39937
標題: Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis
作者: Chang, S.T.
張書通
Liao, M.H.
Lin, W.K.
期刊/報告no:: Thin Solid Films, Volume 519, Issue 15, Page(s) 5022-5025.
摘要: Performances of solar cells, such as short circuit current density, open-circuit voltage, fill factor, and efficiency of solar cells on the multi-crystalline (mc)-SiGe on the Si with different Ge contents, are compared and investigated in this paper. The average Ge concentration was varied from 0% to similar to 20%. Appropriate addition of Ge in crystal Si is a very effective method to enhance the short circuit current density without degrading the open-circuit voltage owing to the modulation of the SiGe band-gap. The band-gap of the SiGe can be extracted by electron-hole plasma (EHP) model. With an optimization of Ge content and clean process condition, the overall efficiency of a Si/SiGe hetero-junction solar cell with Ge content of 8% is found to be similar to 16% and similar to 4% improvement achieved, as compared to the control multi-crystalline (mc)-Si solar cell. The theoretical simulations and analyses can help design the high efficiency Si/SiGe hetero-junction solar cell. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39937
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2011.01.120
Appears in Collections:光電工程研究所

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