Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39937
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dc.contributor.authorChang, S.T.en_US
dc.contributor.author張書通zh_TW
dc.contributor.authorLiao, M.H.en_US
dc.contributor.authorLin, W.K.en_US
dc.date2011zh_TW
dc.date.accessioned2014-06-06T08:02:55Z-
dc.date.available2014-06-06T08:02:55Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/39937-
dc.description.abstractPerformances of solar cells, such as short circuit current density, open-circuit voltage, fill factor, and efficiency of solar cells on the multi-crystalline (mc)-SiGe on the Si with different Ge contents, are compared and investigated in this paper. The average Ge concentration was varied from 0% to similar to 20%. Appropriate addition of Ge in crystal Si is a very effective method to enhance the short circuit current density without degrading the open-circuit voltage owing to the modulation of the SiGe band-gap. The band-gap of the SiGe can be extracted by electron-hole plasma (EHP) model. With an optimization of Ge content and clean process condition, the overall efficiency of a Si/SiGe hetero-junction solar cell with Ge content of 8% is found to be similar to 16% and similar to 4% improvement achieved, as compared to the control multi-crystalline (mc)-Si solar cell. The theoretical simulations and analyses can help design the high efficiency Si/SiGe hetero-junction solar cell. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 519, Issue 15, Page(s) 5022-5025.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2011.01.120en_US
dc.titleSi/SiGe hetero-junction solar cell with optimization design and theoretical analysisen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2011.01.120zh_TW
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