Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39947
標題: Studying the impact of carbon on device performance for strained-Si MOSFETs
作者: Lee, M.H.
張書通
Chang, S.T.
Peng, C.Y.
Hsieh, B.F.
Maikap, S.
Liao, S.H.
關鍵字: Strained-Si:C
Mobility
Strain
Alloy scattering
Interface state
density
SiGe buffer
Carbon
Transmission electron microscopy
inversion-layers
si1-xcx alloys
band-structure
mobility
transistors
scattering
substrate
channel
期刊/報告no:: Thin Solid Films, Volume 517, Issue 1, Page(s) 105-109.
摘要: The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of similar to 40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (D(it)) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39947
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2008.08.087
Appears in Collections:光電工程研究所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.