Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39947
DC FieldValueLanguage
dc.contributor.authorLee, M.H.en_US
dc.contributor.author張書通zh_TW
dc.contributor.authorChang, S.T.en_US
dc.contributor.authorPeng, C.Y.en_US
dc.contributor.authorHsieh, B.F.en_US
dc.contributor.authorMaikap, S.en_US
dc.contributor.authorLiao, S.H.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-06T08:02:55Z-
dc.date.available2014-06-06T08:02:55Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/39947-
dc.description.abstractThe strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of similar to 40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (D(it)) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 517, Issue 1, Page(s) 105-109.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2008.08.087en_US
dc.subjectStrained-Si:Cen_US
dc.subjectMobilityen_US
dc.subjectStrainen_US
dc.subjectAlloy scatteringen_US
dc.subjectInterface stateen_US
dc.subjectdensityen_US
dc.subjectSiGe bufferen_US
dc.subjectCarbonen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectinversion-layersen_US
dc.subjectsi1-xcx alloysen_US
dc.subjectband-structureen_US
dc.subjectmobilityen_US
dc.subjecttransistorsen_US
dc.subjectscatteringen_US
dc.subjectsubstrateen_US
dc.subjectchannelen_US
dc.titleStudying the impact of carbon on device performance for strained-Si MOSFETsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2008.08.087zh_TW
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