Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39960
DC FieldValueLanguage
dc.contributor.authorPei, Z.W.en_US
dc.contributor.author張書通zh_TW
dc.contributor.authorChang, S.T.en_US
dc.contributor.authorLiu, C.W.en_US
dc.contributor.authorChen, Y.C.en_US
dc.contributor.author裴靜偉zh_TW
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:02:56Z-
dc.date.available2014-06-06T08:02:56Z-
dc.identifier.issn0741-3106zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/39960-
dc.description.abstractIn this letter, we propose an amorphous-silicon (a-Si) solar cell with a nanowire-array structure. The proposed structure has photon absorption and carrier transport that are perpendicular to each other, which could overcome the efficiency limit of an a-Si solar cell. This nanowire structure has an n-type a-Si nanowire array in which the i-layer and the p-layer a-Si are sequentially grown along the surface of the nanowire. Under illumination, light is absorbed along the axial direction of the nanowire, and carrier transport is along the radial direction. Numerical simulations show that the photocurrent of the a-Si solar cell with a 4000-nm-long nanowire is nearly 40% more than that of a planar a-Si solar cell. A conversion efficiency of 11.6% was obtained, which is around 32% enhancement.en_US
dc.language.isoen_USzh_TW
dc.relationIeee Electron Device Lettersen_US
dc.relation.ispartofseriesIeee Electron Device Letters, Volume 30, Issue 12, Page(s) 1305-1307.en_US
dc.relation.urihttp://dx.doi.org/10.1109/led.2009.2033318en_US
dc.subjectAmorphous-silicon (a-Si)en_US
dc.subjectnanowire arrayen_US
dc.subjectsolar cellen_US
dc.subjectoptical-absorptionen_US
dc.titleNumerical Simulation on the Photovoltaic Behavior of an Amorphous-Silicon Nanowire-Array Solar Cellen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1109/led.2009.2033318zh_TW
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