Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39962
標題: A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors
作者: Huang, T.H.
張書通
Liu, K.C.
Pei, Z.
Lin, W.K.
Chang, S.T.
裴靜偉
關鍵字: Organic thin film transistor
Hafnium oxide
Random copolymer
Gate
dielectric
performance
circuits
期刊/報告no:: Organic Electronics, Volume 12, Issue 9, Page(s) 1527-1532.
摘要: In this study, we present a low voltage pentacene organic thin film transistor (OTFT) with poly(styrene-co-methyl methacrylate) grafted hafnium oxide (PS-r-PMMA/HfO(x)) as gate dielectrics. The HfO(x) was sputtered at room temperature to approach low temperature and meet low cost requirements of organic electronics. The thickness of the PS-r-PMMA can be controlled to be extremely thin (< 10 nm). Consequently, the gate overdriving voltage as low as 3 V was achieved for an OTFT. Furthermore, by applying PS-r-PMMA on top of the HfO(x) surface, the traps on the HfO(x) surface and possible pinholes of the HfO(x) can be passivated. Therefore, the gate dielectric properties in terms of interface states and leakage current were improved. The leakage current reduced to approximately two orders of magnitude and the interface states reduced to nearly one order of magnitude. The reduction of the interface state density was observed by capacitance-voltage measurement. As a result, the subthreshold swing and on/off current ratio were improved significantly from 1.01 V/dec. and 10(3) to 0.41 V/dec. and 10(5), respectively. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39962
ISSN: 1566-1199
文章連結: http://dx.doi.org/10.1016/j.orgel.2011.05.014
Appears in Collections:光電工程研究所

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