Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39965
標題: Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction
作者: Huang, T.H.
張書通
Pei, Z.
Lin, W.K.
Chang, S.T.
Liu, K.C.
裴靜偉
關鍵字: Hysteresis
Organic/inorganic dielectric
Low voltage OTFT
field-effect transistors
gate dielectrics
circuits
polymers
layer
期刊/報告no:: Thin Solid Films, Volume 518, Issue 24, Page(s) 7381-7384.
摘要: In this work, we investigate the hydroxyl group effect on hysteresis of the low voltage organic thin film transistor (OTFT). A high k material, hafnium oxide, is utilized as gate dielectric to reduce OTFT operational voltage. By using the hydroxyl-free polymer, polystyrene, the hydroxyl groups on hafnium oxide surface will be shielded. The modification at semiconductor/dielectric interface prevents accumulated charges from trapping in surface states. Such a polymer coverage layer reduces hysteresis and suppresses the off current as low as 10(-11) A. The interface traps resulted from ambient water absorption significantly decrease according to the hysteresis cancellation. By stacking polystyrene on hafnium oxide, the pentacene-based OTFT shows the threshold voltage of -2.2 V, on/off current ratio of 10(5), subthreshold swing of 0.34 V/dec, and mobility of 0.24 cm(2)/V s under operational voltage of 10 V. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39965
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2010.05.012
Appears in Collections:光電工程研究所

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