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|標題:||Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing|
|期刊/報告no：:||Vacuum, Volume 86, Issue 3, Page(s) 246-249.|
|摘要:||We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 degrees C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10(3), and a field-effect mobility of 18 cm(2)/Vs. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.|
|Appears in Collections:||光電工程研究所|
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