Please use this identifier to cite or link to this item:
|標題:||Ultra high-density silicon nanowires for extremely low reflection in visible regime|
|期刊/報告no：:||Applied Physics Letters, Volume 99, Issue 15.|
|摘要:||We fabricated large-area, vertically aligned silicon nanowire (SiNW) arrays on Si substrates employing catalytic etching on a polystyrene nanosphere template. The density of SiNWs was as high as 10(10)/cm(2), and the bottom radii of SiNWs ranged between 30 and 60 nm. The reflection from the SiNW layer was approximately 0.1% over the spectral range of 300-800nm for SiNWs longer than 750 am. Effective medium theory was applied to explain this extremely low reflection, and it was confirmed that the incident light scatters randomly inside cone-like SiNWs, which lengthens the actual traveling path of light. (C) 2011 American Institute of Physics. [doi10.1063/1.3650266]|
|Appears in Collections:||光電工程研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.