Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39988
標題: Enhanced P3HT OTFT Transport Performance Using Double Gate Modulation Scheme
作者: Lo, P.Y.
裴靜偉
Li, P.W.
Pei, Z.W.
Hou, J.
Chan, Y.J.
關鍵字: Double gate
operation mode
organic thin-film transistor (OTFT)
field-effect transistors
device characteristics
behavior
期刊/報告no:: Ieee Electron Device Letters, Volume 30, Issue 6, Page(s) 629-631.
摘要: Electrical properties of single-gated (bottom-gated or top-gated) and double-gated (DG) organic thin-film transistors (OTFTs) are systematically investigated in terms of threshold voltage (V(th)), subthreshold slope, and I(ON)/(OFF). We found that the device structure has significant impacts on the aforementioned electrical properties and the operation modes in a poly-3-hexyl thiophene DG OTFT. An empirical electrostatic potential model is employed to describe well V(th) behaviors of DG OTFTs in different modulation schemes. In addition, selective active-area coating in OTFTs is realized using an inkjet printing process, and consequently, parasitic leakage is much suppressed.
URI: http://hdl.handle.net/11455/39988
ISSN: 0741-3106
文章連結: http://dx.doi.org/10.1109/led.2009.2018707
Appears in Collections:光電工程研究所

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