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標題: Temperature-dependent ultra-thin polymer layer for low voltage organic thin-film transistors
作者: Huang, T.H.
Huang, H.C.
Pei, Z.W.
關鍵字: Low voltage OTFT
Organic dielectric
Random copolymer
field-effect transistors
gate dielectrics
期刊/報告no:: Organic Electronics, Volume 11, Issue 4, Page(s) 618-625.
摘要: In this article, a low voltage organic thin-film transistor (OTFT) was accomplished by using a random copolymer, poly(styrene-co-methyl methacrylate) (PS-r-PMMA), as the gate dielectric. The thickness of PS-r-PMMA polymer can be controlled well by thermal process and shows an ultra-thin property after toluene rinse. The thickness of PS-r-PMMA can be controlled in the range of 2-14 nm. By the densely packed copolymer brush, a leakage current as low as 10 (9) A/cm(2) was obtained. By utilizing this polymer as gate dielectric, pentacene based organic thin-film transistor could be operated at 5 V with 0.1 cm(2)/V s mobility and 0.27 V/dec subthreshold swing. In addition to good OTFT properties, the coating, annealing and removing sequential process of PS-r-PMMA ensure that this technique is compatible with the large area printing methods such as ink-jet printing and doctor blade coating. The random copolymer dielectric is therefore suitable for OTFT in large area printed fiexible electronic applications. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 1566-1199
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