Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/40005
標題: Self-limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide
作者: Lin, Y.T.
貢中元
Chung, P.H.
Lai, H.W.
Su, H.L.
Lyu, D.Y.
Yen, K.Y.
Lin, T.Y.
Kung, C.Y.
Gong, J.R.
龔志榮
關鍵字: ZnO
Atomic layer deposition
Absorption spectroscopy
epitaxy
n2o
期刊/報告no:: Applied Surface Science, Volume 256, Issue 3, Page(s) 819-822.
摘要: Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N(2)O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 degrees C in a range of DEZn flow rates from 5.7 to 8.7 mu mol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 degrees C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N(2)O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N(2)O precursors. (C) 2009 Elsevier B. V. All rights reserved.
URI: http://hdl.handle.net/11455/40005
ISSN: 0169-4332
文章連結: http://dx.doi.org/10.1016/j.apsusc.2009.08.067
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