Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/40050
標題: (IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure
作者: Y. L. Jiang
H. L. Hwang
關鍵字: Field-Drifting Resonant Tunneling
a-Si:H/a-Sil-xCx:H
Quantum Wells
i-Layer
p-i-n Structure
出版社: USA:IEEE Electron Devices Society
URI: http://hdl.handle.net/11455/40050
ISSN: 0018-9383
Appears in Collections:光電工程研究所

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