Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4046
標題: 矽膠封裝膠材對於發光二極體特性 與壽命之影響
Effects of Silicone Encapsulant Materials on Performance and Lifetime of Light-Emitting Devices
作者: 羅杏芬
Lo, Sin-Fan
關鍵字: Encapsulation
封裝膠材
Silicone Resin
Surface Mount
light-Emitting Diode
有機矽樹脂
表面黏著型發光二極體
出版社: 精密工程學系所
引用: [1] M. S. Weaver, L. A. Michalski, K. Rajan, M. A. Rothman, J. A. Silverail, and J. J. Brown, “Organic light-emitting devices with extended operating lifetimes on plastic substrates,” Appl. Phys. Lett. Vol. 81, pp. 2929-2931, 2002. [2] P. E. Burrows, S. R. Forrest, T. X. Zhou, and L. Michalski, “Operating lifetime of phosphorescent organic light emitting devices,”Appl. Phys. Lett. Vol. 76, pp. 2493-2495, 2000. [3] J. C. Scott, J. H. Kaufman, P. J. Brock, R. DiPietro, J. Salem, and J. A. Goitia, “Degradation and failure of MEH-PPV light-emitting diodes,”J. Appl. Phys. Vol. 79, pp. 2745-2751, 1996. [4] B. H. Cumpston, I. D. Parker, and K. F. Jensen, “In situ characterization of the oxidative degradation of a polymeric light emitting device,” J. Appl. Phys. Vol. 81, pp. 3716-3720, 1997. [5] 彭耀鐶, “高分子材料’’ 大中國圖書公司印行,1995年。 [6] C. F. Tsou and Yu. S. Huang, “Silicon-based packaging platform for light-emitting diode,” IEEE Trans. Advanced Packaging, Vol. 29, pp. 607-614, 2006. [7] S. C. Wei et al, “AlGaInP light emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. Vol. 75, pp. 2230 -2234, 1999. [8] Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, “Nitride-Based LEDs with textured side walls,” IEEE Sensors J. Vol. 2, pp. 366, 2002. [9] S. Nakamura, T. Mukai, andM. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. Vol. 64, pp. 1687-1689, 1994. [10] S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai, and S. C. Shei “Nitride-based Flip-Chip LEDs with transparent ohmic contacts and reflective mirrors,” IEEE Trans. Electron Devices, Vol. 29, pp. 403-408, 2006. [11] O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, “Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes,” Appl. Phys. Lett. Vol. 79, pp. 2895, 2001. [12] N. F. Gardner et al, “1.4 times efficiency improvement in transparent substrate (AlxGa1-x)0.5In0.5P light emitting diodes with thin active regions,” Appl. Phys. Lett. Vol. 74, pp. 2230-2232, 1999. [13] M. Broditsky et al, “Light extraction from optically pumped light-emitting diode by thin slab photonic crystals,” Appl. Phys. Lett. Vol. 75, pp. 1036, 1999. [14] J. K. Kim, H. Luo, E. F. Schubert, J. Cho, C. Sone and Y. Park, “Strongly enhanced phosphor efficiency in GaInN white light -emitting diodes using remote configuration and diffuse reflector cup,” Appl. Phys. Lett. Vol. 44, pp. L649-L651, 2005. [15] L. H. Lee, and W. C. Chen,“High refractive index thin films prepared from trialkoxysilane-capped poly(methyl methacrylate) -titania hybrid materials,” Chem. Mater. Vol. 13, pp. 1137-1142, 2001. [16] D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, Member, IEEE, Paul S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE, Vol. 8, pp. 310-320, 2002. [17] A. M. Norris, Dow Corning, Midland, Michigan and M. E. Gladstone, “Silicone materials for chip-scale packaging,” Chip Scale Rev., pp. 260-527, 1998. [18] H. Lee and Y. Y. Earmme, “A fracture mechanics analysis of the effects of material properties and geometries of components on various types of package cracks,” IEEE Trans. Comp Package Manufact Technol, Vol. 19, pp. 168-178, 1996. [19] 史光國, “現代半導體發光及雷射二極體材料技術” 全華科技,台北,台灣,pp. 5-1~5-10,2001年。 [20] Srinath Aanegola, Jim Petroski, and Emil Radkov, GELcore LLC, “Let there be light,” SPIE''s Oemagazine, pp. 16-18, 2003. [21] C. J. Lin, M. J. Lin, S.P. Wu and F. G. Tseng, “High density and through wafer copper interconnections and solder bumps for MEMS wafer-level packaging,” Microsystem Technologies, Vol. 10, pp. 571 -521, 2004. [22] Y. Sato, S. Ichinosawa, H. kanai, “Operation characteristics and degradation,” IEEE J. Selected Topics in Quantum Electronics, Vol. 4, pp. 40-48, 1998.
摘要: 本論文主要探討矽膠封裝膠材對於發光二極體特性與壽命之影響,由於發光二極體封裝材料之要求將朝向低熱應力、低吸濕性、高接著性、耐焊錫溫度、機械強度和電性測試來考量,而傳統習用之環氧樹脂在工作環境過高時,因高分子會斷裂產生自由基,導致封裝材料劣化而產生黃變,使出光效能大打折扣,也會讓白光發光二極體產生色偏的現象。由於矽膠封裝膠材具有抗紫外光、抗黃變,故探討以有機矽樹脂封裝膠材對發光二極體色彩所產生的影響,同時研究短波長的光及晶粒發熱造成對封裝膠材劣化的效應,包括發光二極體亮度及可靠度減低等。 從本論文的研究結果可發現,積分球量測表面黏著型黃光晶粒在使用高折射率有機矽樹脂封裝膠材下,其亮度可提升2.16倍,經由傅立葉轉換紅外線光譜儀得知關鍵化學鍵為苯環,但由可靠度測試結果得知含有苯環的封裝膠材易造成亮度衰減。因此尋找最適封裝膠材與晶粒以進行最佳化封裝,須先了解封裝膠材對發光二極體元件亮度與可靠度的影響,藉以作為開發高性能矽膠封裝膠材選擇評估依據。
This thesis describes the effects of silicone encapsulant materials on the performance and lifetime of light-emitting devices (LEDs). It is well known that the development of LED packaging materials needs to take account of the low heat stress, low water absorbability, high adherence, bearing the soldering tin temperature, mechanical intensity, and the electrical test. Once the conventional epoxy package encountered with the overheated temperature, the polymer molecular bond configuration would be broken and produced undesirable free radicals. This will deteriorate the packaging material and results in the yellowing problem; i.e. making the white light LED have the chromatic polarization phenomenon. It has been reported that the silicone encapsulation is anti-UV and anti-yellowing. In this study, the influence of silicone encapsulation on the performance of white light LED is investigated. The effects of short wavelength and the chip heating on the LED lamp was examined. It was found that the high refraction index of the silicone encapsulation for the yellow chip showed 2.16 times enhancement in output power as obtained from the integral sphere. From the measurements of Fourier transform infrared spectra, the essential chemical bond of the silicone encapsulation is of benzene ring structure. However, the packaging material with the benzene ring showed evident brightness degradation after the reliability test. The optimization of the encapsulation materials for the bare chips becomes an important issue for high brightness LEDs with high reliability.
URI: http://hdl.handle.net/11455/4046
其他識別: U0005-0502200712082700
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0502200712082700
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