Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4054
標題: 新型氮化鎵發光二極體光電特性及可靠度之研究
Investigation of Optoelectronic Properties and Reliability on New GaN Light-Emitting Diodes
作者: 張雅芳
Chang, Ya-Fang
關鍵字: GaN
氮化鎵
luminous intensity
ESD
life test
光強度
靜電測試
壽命測試
出版社: 精密工程學系所
引用: [1]http://www.lumileds.com/index.html [2]E. Fred Schubert, “Light-Emitting Diodes”, Cambirdge University, June 9, 2003. [3]S. Yoshida, S. Misawa and S. Gonda, “Improvements on the electrical and luminescent properties of reactive molecular beam epitaxy grown GaN film by using AlN-coated sapphire substrates”, Appl. Phys. Lett. 42, 427(1983). [4]H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, ”P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)”, Appl. Phys. Lett. 28, 2112 (1989). [5]S. Nakamura, ” GaN Growth Using GaN Buffer Layer”, Appl. Phys. Lett. 30, 1705(1991). [6]S. Nakamura, “Thermal Annealing Effects on P-Type Mg-Doped GaN Films”, Appl. Phys. Lett. 31, L139- L142(1992) [7]S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, “Improvement of InGaN–GaN Light-Emitting Diodes With Surface-Texturedn Indium–Tin–Oxide Transparent Ohmic Contacts”, IEEE Photonics Technol. Lett. 15, 649(2003). [8]C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu, C. C. Lin, “Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface”, Mater. Sci. Eng. B112, 10 (2004) [9]楊喬智, “提升氮化鎵系列外部量子效率之研究”, 國立中興大學碩 士論文(2005). [10]史光國, “現代半導體發光及雷射二極體材料技術”, 全華科技圖書, 台北, 台灣, 2-1~2-6(2001). [11]林昭穎, 韓偉國, “高亮度LED之光學與封裝設計趨勢介紹”, 工業材料, 208, 131(2004). [12]A. Zukauskas, M. S. Shur, R. Gaska, “Introduction to Solid-State Lighting”, John Wiley&Sons, Inc.(2002). [13]潘錫明, 廖秋峰, “LED照明光源展望(二)漫談提高LED發光效率之技術”, 工業材料, 221, 155(2005). [14]N. N. Morgan, Y. Zhizhen, X. Yabou, “Evaluation of GaN growth improvement techniques”, Mater. Sci. Eng. B 90, 201(2001). [15]K. Hiramatsu,“Epitaxial lateral overgrowth techniques used in group III nitride epitaxy”, J. Phys. : Condens. Matter. 13, 6961 (2001). [16]C. Huh, K. S. Lee, E. J. Kang, and S. J. Park,“Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface”, Appl. Phys. Lett. 93, 11, 9383(2003). [17]A. Elayed , “ Reliability Engineering”, Assison Wesley, 1996 [18]楊善國, “可靠度工程概論”, 全華科技圖書, 2005 [19]張正忠, “產品加速壽命測試規劃之研究-以8025無刷直流風扇為例”, 高雄第一科技大學碩士論文(2004). [20]MIL-STD-883C method 3015.7, "Military Standard Test Methods and Proc. For Microelectronics", Dept. of Defense, Washington, D. C., U.S.A., 1989. [21]陳明武, “被動式液晶顯示器抗靜電能力之探討”, 逢甲大學碩士論文(2005). [22]陳奕帆, “氮化鎵橫向磊晶之研究”, 逢甲大學碩士論文(2000). [23]廖偉材, “氮化鋁鎵/氮化鎵超晶格原子層磊晶之研究”, 逢甲大學碩士論文(2002). [24]S. Sakai, T. Wang, Y. Morishima, Y. Naoi, “A new method of reducing dislocation density in GaN layergrown on sapphire substrate by MOVPE”, J. Cryst. Growth. 221 , 334(2000). [25]Y. P. Hsu, S. J. Chang, Y. K. Su, Senior Member, IEEE, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, and C. S. Chang, “InGaN–GaN MQW LEDs With Si Treatment”, IEEE Photonics Technol. Lett. 17, 8, 1620(2005). [26]李逸超, “氮化鎵發光二極體壽命測試之研究”, 國立中興大學碩士論文(2006) [27]G. Meneghesso, S. Levada, R. Pierobon, “Reliability Analysis of GaN -Based LEDs for Solid State Illumination”, IEICE Trans. Electron, E86-C, 2032(2003) [28]許晉源, “缺陷對氮化物藍光二極體光電特性之影響”, 國立交通大學博士論文(2006) [29]許維謙, “電子構裝中電遷移對介面反應及擴散影響之模擬”,國立清華大學碩士論文(2004) [30]H. Kim, H. Yang, C. Huh, S. W. Kim, S. J. Park and H. Hwang, “Electromigration-induced failure of GaN multi-quantum well light emitting diode”, Electron. Lett. 36, 10, 908(2000) [31]曾素芬, “含鋁之Ⅲ族氮化物多層結構影響氮化镓薄膜內貫穿式差排行為之研究”, 逢甲大學碩士論文(2003)
摘要: 本論文將探討具備相同正向光強度之側向磊晶晶粒與p型氮化鎵表面矽處理晶粒經封裝後之正向光強度與光功率差異之原因,並進行此兩種晶粒之抗靜電能力測試與不同環境溫度、不同操作電流的壽命測試,判斷兩種晶粒各方面特性之優劣與差異,並分析造成差異之原因。 側向磊晶晶粒在封裝後有較高的正向光強度5.46 cd,p型氮化鎵表面矽處理晶粒僅有3.31 cd,但兩者之光功率分別15.43、15.18 mW,差異並不大,因p型氮化鎵表面矽處理晶粒之光場與主軸光分布偏向p極,故封裝後亮度無法提升至如側向磊晶晶粒程度。p型氮化鎵表面矽處理晶粒有電流分布不均之情形,造成晶粒本身較低的抗順向靜電電壓能力,差排會造成抗靜電能力的降低,因此側向磊晶晶粒有較p型氮化鎵表面矽處理晶粒更高的抗逆向靜電電壓能力。在業界慣用條件:封裝成品在高溫(85˚C)、常濕(55%RH)、20 mA下,側向磊晶晶粒較p型氮化鎵表面矽處理晶粒之光衰情況減少11.80%,p型氮化鎵表面矽處理晶粒因有第二層p型氮化鎵磊晶層,可以阻擋電極金屬因電遷移由差排進入磊晶層,因此有較低的漏電流。 本研究藉由相異磊晶製程之氮化鎵發光二極體的各種測試,驗證兩種晶粒封裝後光強度的差異、抗靜電能力之優劣及在各種條件下之壽命測試老化情況,進而分析及解釋其原因,以作為客訴分析系統與可靠度品質系統之參考資料,以掌握產品特性及提升產品之競爭力。 關鍵字:氮化鎵、光強度、靜電測試、壽命測試
In this thesis, the properties of lamp packaged from the light emitting diodes (LEDs) grown by epitaxial lateral overgrowth (ELOG) and Si treatment were compared. Here, these LEDs (before packaged) present almost the same luminous intensity. Then, these two kind lamps will be tested in ESD ability and life test under different temperature and current to compare the difference of various characteristics between the lamps. The luminous intensity of ELOG LED and LED with Si treatment after packaged was about 5.46 cd and 3.31 cd, respectively. The corresponding output powers of these two kind LEDs after package was 15.43 mW and 15.18 mW. The difference was not obvious. Nevertheless, the luminous intensity of LED with Si treatment can not reach the level of ELOG LED because the distribution of optical field and spindle light closed to p electrode. The current distribution of LED with Si treatment was not very well so it causes the lower forward ESD ability. ELOG LED presents better reverse ESD ability than LED with Si treatment does. It could be attributed to the dislocations reducing the ESD ability. In the common condition : 85˚C, 55%RH, 20mA, the light decay of ELOG LED was less 11.80% than that of LED with Si treatment. LED with Si treatment has second p-GaN epilayer which can resist the metal diffusion into epilayer by electromigration so it has lower leakage current. According to the various tests in this thesis, the mechanisms about the difference of luminous intensity, the quality of ESD ability and the decay of life test were provided for these two kinds of LEDs after packaged. The database of customer complain analysis system and reliability quality system were also established. keyword: GaN, luminous intensity, ESD, life test
URI: http://hdl.handle.net/11455/4054
其他識別: U0005-0602200711045400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0602200711045400
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