Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4060
標題: 電子束蒸鍍氧化銦錫透明導電膜及其對氮化鎵綠光發光二極體特性之影響研究
Effects of Electron-Beam Evaporated ITO Films on Performance of GaN Green Light-Emitting Diodes
作者: 張家豪
Chang, Chia-Hao
關鍵字: GaN LED
氮化镓發光二極體
ITO
E beam evaporation
氧化銦錫薄膜
電子束蒸鍍
出版社: 精密工程學系所
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摘要: 本論文以 In2O3:SnO2=95:5 之 ITO 材料當作蒸鍍源,實驗結果發現在低溫下成長之薄膜穿透率較低溫下高出很多,150 oC 蒸鍍之薄膜穿透率在氧流量的改變下穿透率範圍為 25~75 %,在 280 oC 蒸鍍環境穿透率為 85~93%,由此可知蒸鍍溫度的重要性;接著討論在熱處理環境對元件之歐姆接觸狀況,發現到氮氣熱處理之後的特徵電阻值較空氣為優良,另外針對於熱處理溫度的比較發現隨著溫度的上升接觸電阻會有下降的趨勢在 500 oC 為最低上升到 600 oC 則接觸電阻有上升的趨勢。 實驗結果發現,以蒸鍍不同溫度蒸鍍的蒸鍍結果,其中最佳的蒸鍍條件為 280 oC 氧流量13 sccm 蒸鍍的薄膜穿透率 T 為 93 %,片電阻值 RS 為7.7 Ω/□, 熱處理最佳條件為 550℃ 氮氣,熱處理後穿透率為 97 % ,片電阻值RS為23 Ω/□,調整 ITO 薄膜厚度最佳的厚度討論膜厚的改變對於發光亮度的影響結果 3750 Å有最佳的表現。
The Indium Tin Oxide (ITO) material with In2O3:SnO2 = 95:5 composition % are used as the deposited source in the thesis. It is found that the transparency of ITO thin films is higher at high deposited temperature than low deposited temperature. Under different oxygen flows, The transparency varies from 25% to 75% at 150 oC, It increases to 85%~93% when the temperature moves up to 280 oC.This suggest that the deposited temperature is very important. It is then followed to discuss the thermal annealing ambient on the ohmic contact of the components. It is found that the specific resistance presents better under nitrogen ambient than in the air. In terms of comparisons between different thermal annealing temperatures, it is noted that the contact resistance tends to declines when the samples annealed under high temperatures. The contact resistance trends down as lowest level At 500 oC but trends up when the temperature at 600 oC. The experiments result shows that the optimum transmission 93 % and the optimum sheet resistance 7.7Ω/□ was when ITO film deposited at temperature 280 oC and oxygen flow 13 sccm . The optimum condition for annealing ambient is temperature 550 oC, the transmission varies after annealing reaches 97% and the sheet resistance increases to 23Ω/□. The optimum ITO film thickness is at 3750Å.
URI: http://hdl.handle.net/11455/4060
其他識別: U0005-0702200709450800
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