Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4071
標題: 發光二極體用鋁/鉻/氧化銦錫薄膜電極之研製與其物理特性之探討
A Study of Al/Cr/ITO Electrodes and Their Physical Properties for Light-Emitting Diodes
作者: 劉雅玲
Liu, Ya-Ling
關鍵字: Indium-tin oxide (ITO)
氧化銦錫(ITO)
Al
Cr
Adhesion
Light-emitting diode
Bonding pad


附著性
發光二極體
打線鋁墊
出版社: 精密工程學系所
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摘要: 近來高度發光二極體多以氧化銦錫 (ITO) 透明導電膜作為電流分佈層,ITO導電膜因具透明的特性,其在紅、黃光波段,光穿透率可超過90﹪,且導電特性良好,可避免電流侷限於金屬電極下方,因此非常適合用來提升發光二極體的發光效率。 鋁金屬具有低電阻,可減少延遲時間,價格便宜的優點,是元件金屬打線電極中常採用的金屬,然而由於鋁表面非常容易生成小突起(hillock),且和ITO薄膜間的附著性並不理想,嚴重地影響元件的機械特性與可靠度。一般為提高兩者間的附著性,會於兩者間沈積易氧化金屬,如鈦、鉬、鉭、鉻等作為過渡中間層,藉由過渡金屬形成化合物中間層來增加附著性。 因此本研究主要探討當於ITO薄膜與鋁薄膜間,沈積不同厚度的鉻薄膜,對後續沈積的鋁/鉻/ITO薄膜,其物理特性的影響及附著性上的差異。另一方面,則探討經過熱處理製程後,對鋁/鉻/ITO薄膜所造成的影響。由本論文實驗結果發現,當直接沉積鋁於ITO薄膜時,以X光繞射分析,發現鋁薄膜存在多種晶相結構,而沉積10 nm的鉻於鋁及ITO薄膜間後,鋁薄膜存在較高的[111]結構,其表面產生許多的小突起;隨著鉻厚度的增加,鋁薄膜表面小突起的數量則漸漸減少。附著性方面,當於鋁和ITO錫薄膜間,沈積10 nm的鉻薄膜,即可明顯提升薄膜附著性,薄膜附著性由小於0.25 N/mm2提升至47.78 N/mm2。當分別沉積40、70、100 nm的鉻於鋁和氧化銦錫薄膜間後,其附著性則變為50.96、27.27、24.18 N/mm2。快速升降溫熱處理,可以使薄膜晶粒再成長,也提供各層薄膜原子互相擴散提升附著性,然而同時也會因熱應力過大,導致薄膜附著性下降。
Currently, indium-tin oxide(ITO)thin films have been widely used as the transparent current spreading layers for light-emitting diodes (LEDs) to improve the luminescence efficiency. The transmittance of the ITO film can achieve more than 90% in the yellow and red wavelength region and shows highly conducting to avoid the current confined under the electrode. Aluminum (Al) pad is commonly used as the metal electrode in electric devices, mainly because of its low electric resistance, small RC delay time and low cost. However, the hillock formation on the Al surface and poor adhesion between Al and ITO strongly degrade the reliability performance. An interlayer between the Al and ITO films was proposed to solve these problems. Generally, transition metals (Ti, Mo, Ta, Cr) were deposited as the intermediate layer to improve the adhesion due to its easy oxidization with ITO. In this thesis, the effects of Cr interlayer thickness between Al/ITO thin films were investigated. Various thermal treatment processes were performed on the Al/Cr/ITO thin-film structure. It was found that he Al film formed varies crystalline orientations on the ITO surface in the absence of Cr interlayer. By inserting a 10-nm-thick Cr interlayer, the Al showed highly [111] diffraction peak and lots of hillocks. This improves the pull force of Al/Cr/ITO thin film from 0.25 N/mm2 to 47.78 N/mm2. Further increasing the Cr thickness results in larger grain size and fewer hillocks in the Al pads. The 40-, 70- and 100-nm-thick Cr intermediate layers correspond to the pull force of 50.96、27.27 and 24.18 N/mm2, respectively. Additional thermal treatment could be made grains growth and atomic diffusion to improve the film quality. Nevertheless, it could yield inferior adhesion properties between Al and ITO due to the higher thermal stress in our experimental range.
URI: http://hdl.handle.net/11455/4071
其他識別: U0005-0807200611010200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0807200611010200
Appears in Collections:精密工程研究所

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