Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4072
標題: 高電壓氮化鎵發光二極體之研究
Study on High-Voltage GaN Light Emitting Diodes
作者: 林佳樺
Lin, Jia-Hua
關鍵字: GaN
發光二極體
LED
Laser lift-off
thin film
roughening
high-voltage
high efficiency
雷射剝離技術
薄膜
粗化
高電壓
高效率
出版社: 精密工程學系所
引用: [1] T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C.H. Kuo, C. H. Chen, J. K. Sheu, and J. F. Chen, Electron Devices, IEEE Transactions 49,1093 (2002). [2] D. B. Eason, W. C. Hughes, J. Ren, M. Riegner, Z. Yu, J. W. Cook, J.F. Schetzina, G. Cantwell, and W. C. Harsch, Electron. Lett. 30,1178 (1994). [3] G. E. Stillman, V. M. Robbins, and N. Tabatabaie, Electron Devices, IEEE Transactions 31, 1643 (1984). [4] H. Sugawara, and M. Ishikawa, and G. Hatakoshi, App. Phys. Lett.58, 1010 (1991). [5] H. Sugawara, and M. Ishikawa, and G. Hatakoshi, App. Phys. Lett.61, 1752 (1992). [6] D. A. Vanderwater, I. H. Tan, G. E. Hofler, D. C. DeFevere, and F. A. Kish, IEEE. 85, 1752 (1997). [7] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995). [8] F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, Appl. Phys. Lett. 64, 2839 (1994). [9] F. A. Kish, D. A. Vanderwater, D. C. DeFevere, D. A. Steigerwald, G. E. Hofler, K. G. Park, and F. M. Steranka, Electron. Lett. 32, 132 (1996). [10] J. I. Pankove, and P. E. Norris, Radio Corporation of America(RCA) Review. 33, 377 (1972). [11] S. Yoshida, S. Misawa, and S. Gonda, Journal of Vacuum Science & Technology B. 1, 250 (1982). [12] M. Hao, T. Sugahara, H. Sato, Y. Morishima, Y. Naoi, L. T. Romano, and S. Sakai, Jpn. J. Appl. Phys. 37, L291 (1998). [13] Zukauskas, M. S. Shur, and R. Gaska, Introduction to Solid-State Lighting. New York: Wiley and Sons (2002). [14] S. Nakamura and S. F. Chichibu, Introduction to Nitride Semiconductor Blue Laser Diode and Light Emitter Diodes. London: Taylor and Francis (2000). [15] S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers. Berlin: Springer (2000). [16] Ray-Hua. Horng, Xinhe. Zheng, Chuang-Yu. Hsien and Dong-Sing. Wuu, Appl. Phys.Lett., 93, 021125 (2008). [17] 史光國,“半導體LED及固態照明”, 全華科技圖書股份有限公司出版,台北,台灣, 2-52 (2005). [18] E.Hecht,“Optics”4th, 117, 2002. [19] 郭浩中等,“LED原理與應用”, 五南圖書股份有限公司出版,台北,台灣, 230-235(2009). [20] Y. Xi and E. F. Schubert, Appl. Phys. Lett. 85, 2163 (2004). [21] Y. Xi, J. Q. Xi, Th. Gessmann, J. M. Shah, J. K. Kim, E. F. Schubert, A. J. Fischer, M. H. Crawford, K. H. A. Bogart, and A. A. Allerman, Appl. Phys. Lett. 86, 031907 (2005). [22] S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, IEEE. 15, 646 (2003). [23] 謝創宇, 具雙面粗化及高反射鏡面基板之高效率GaNLED之研製, 中興大學精密工程研究所碩士學位論文 (2008). [24] 吳俊儀, 週期性表面粗化GaNLED之研製, 中興大學精密工程研究所碩士學位論文 (2008). [25] 廖子維, 不同粗化形貌對氮化銦鎵LED取光效率及接面溫度特性影響之研究, 中興大學精密工程研究所碩士學位論文 (2009). [26] 盧怡安, 具掩埋式LED之研究, 中興大學精密工程所碩士學位論文(2010). [27] S. Todoroki, M. Sawai, and K. Aiki, J. Appl. Phys. 58, 1124 (1985). [28] C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu, C. C. Lin, Mater. Sci. & Eng. B, 112, 10 (2004). [29] J. K. Sheu, Y. K. Su, G. C. Chi, W. C. Chen, C. Y. Chen, C. N. Huang, J. M. Hong, Y. C. Yu, C. W. Wang, and E. K. Lin, J. Appl. Phys. 83, 3172 (1998). [30] J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, Appl. Phys. Lett. 74, 1275 (1999). [31] J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, K. K. Shih, L. C. Chen, F. R. Chen, and J. J. Kai, J. Appl. Phys. 86, 4491 (1999). [32] S. R. Jeon, Y. Ho. Song, H. J. Jang, and G. M. Yang, Appl. Phys. Lett. 78, 3265 (2001). [33] T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P.DenBaars, and L. A. Coldren, Appl. Phys. Lett. 74, 3930 (1999). [34] R. H. Horng, D. S. Wuu, Y. C. Lien, and W. H. Lan, Appl. Phys. Lett. 79, 2925 (2001). [35] C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, J. K. Sheu, IEEE. 50, 2208 (2003). [36] R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, Jpn. J. Appl. Phys. 39, 2357 (2000). [37] Ray-Hua Horng, Xinhe Zheng, Chuang-Yu Hsieh, and Dong-Sing Wuu, Appl. Phys.Lett. 93, 021125 (2008). [38] Z. Li, X. Hu, K. Chen, R. Nie, X. Luo, X. Zhang, T. Yu, B. Zhang, S. Chen, Z. Yang, Z. Chen and G. Zhang, Micron, 36, 281 (2005).
摘要: 本論文針對p型氮化鎵層(p-GaN)朝上、雙面粗化、具高反射鏡面矽基板之高電壓GaN 發光二極體(LED)進行研究。該元件主要是利用基板轉移技術,配合雷射剝離技術、乾/溼蝕刻技術、雙面粗化(u-GaN, p-GaN)、高反射鏡面與高熱傳導基板,將其應用於藍光LED。其中p-GaN在磊晶時,利用低溫成長方式產生的六角孔洞為粗化結構;以雷射剝離將sapphire基板移除之後,以氫氧化鈉溶液將u-GaN蝕刻成六角錐狀,再將磊晶膜轉換至結合高反射鏡面之矽基板完成元件之單顆LED,再經過製程將64顆LED進行元件內部八串八並金屬連線,得到高電壓GaN LED。 本論文討論四種型式之高電壓LED如下:p-GaN單面粗化、具藍寶石基板之LED (single side roughening-bare die, SR-B);p-GaN及u-GaN雙面粗化與具矽基板之LED(double side roughening-bare die, DR-B);將SR-B加以封裝之LED(single side roughening-packaged, SR-P)及將DR-B加以封裝之LED(double side roughening-packaged, DR-P)。在電特性方面,元件於基板的轉移過程並未使電壓產生變化,於80mA電流注入前述四種高電壓LED元件,其工作電壓分別為23.521、23.332、23.521、23.332 V。在光特性方面,當80 mA操作電流注入SR-B、DR-B、SR-P及DR-P之電光轉換效率分別為30.311 、38.500 、37.661、47.855 %;在光取出率部分,以80 mA注入SR-B、DR-B、SR-P及DR-P時,元件中單顆LED之光取出率分別為47.223、59.498、58.673、73.956 %;經由表面溫度量測,SR-B、DR-B等高電壓LED在80 mA電流注入下,其結果分別為53.1 oC 及43.7 oC。研究結果顯示,經晶圓黏貼製程後之薄膜型高電壓LED其光及熱特性均有所改善。
P-GaN side up high-voltage GaN LEDs with high reflection on silicon substrate and both p-GaN and undoped-GaN roughening layers have been investigated. The devices are subsequently fabricated with wafer-bond, laser lift-off, chemical dry/wet etching and double-side roughening techniques to transfer epilayer to silicon substrate with mirror. The roughness on p-GaN surface was fabricated via low temperature growth, and rough surface of u-GaN was made by wet-etching. Then we connected 64 cells by 8×8 chips to get high-voltage LEDs. The forward voltage of LEDs with single side roughening-bare die(SR-B), SR-B), with double side roughening-bare die(DR-B), with single side roughening-packaged(SR-P) and with double side roughening-packaged(DR-P) was 23.521, 23.332, 23.521 and 23.332 V at 80 mA, it implied no destroy occurred on electric properties during processes. The wall plug efficiency of SR-B, DR-B, SR-P and DR-P at 80 mA current injection was 30.311, 38.500, 37.661 and 47.855 %, and light extraction efficiency of SR-B, DR-B, SR-P and DR-P cell was 47.223, 59.498, 58.673 and 73.956 % respectively. Moreover, SR-B and DR-B at 80 mA injection, the highest surface temperature was 53.1 and 43.7 oC. The optical and thermal characteristics of thin film high-voltage LEDs had been obviously improved via wafer bonding process.
URI: http://hdl.handle.net/11455/4072
其他識別: U0005-2208201119375900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2208201119375900
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