Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4091
標題: 粗化視窗層對磷化鋁銦鎵發光二極體亮度影響之研究
Effects of roughened window layer on the characteristic of AlGaInP light emitting diodes
作者: 張道淇
Chang, Tao-Chi
關鍵字: AlGaInP
磷化鋁銦鎵
surface-roughing
external quantum efficiency
表面粗化
外部量子效率
出版社: 精密工程學系所
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摘要: 本論文使用化學濕式蝕刻的技術,對磷化鋁銦鎵(AlGaInP)發光二極體進行其視窗層之表面粗化,提昇發光二極體外部出光效率,並有效增加發光二極體內部產生的光射出,而減少光的全反射,結果發現在注入電流20 mA電壓為2.15 V,其增加了30 %的出光效率。 研究AlGaInP發光二極體的光電特性,發現視窗層表面粗糙度從48 nm~151 nm時,與粗化前之外部出光效率相比,在注入電流20 mA電壓為2.15 V其增加外部出光效率從7%到31%,順向電壓可以控制在 2.4 V以下,而漏電流也可以控制在0.1 nA以下,可見粗化並不會影響電流、電壓特性。值得一提的是將元件經過200個小時50 mA老化壽命可靠性試驗,發現元件的亮度和順向電壓未超過基本值的20%範圍。
A surface-roughing technique, employed by chemical wet etching, was studied for the light extraction efficiency of the AlGaInP light emitting diodes (LEDs). The roughing technique used in this dissertation had been effectively reduced the total internal reflection in the LED structure. It results in ~ 30% increasing of external quantum efficiency at 20 mA. The detailed electrical and optical properties of the AlGaInP LEDs were investigated. It was found that the LEDs with roughened surface 48 nm to 151 nm present the output efficiency 7% to 31% at 20 mA as compared with LED with flat surface. The forward voltage was controlled under 2.4 V and current leakage was controlled under 0.1 nA, indicating the absence of the degradation in the electrode contacts. Meanwhile, a reliability test was performed. The deviation of the decrease in light intensity and forward voltage was found within 20% after operating at 50 mA after 200 hours. The test shows that the surface-roughing technique has no significant effect on the device reliability.
URI: http://hdl.handle.net/11455/4091
其他識別: U0005-1508200610021100
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1508200610021100
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