Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4091
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dc.contributor武東星zh_TW
dc.contributor郭政達zh_TW
dc.contributor.advisor洪瑞華zh_TW
dc.contributor.author張道淇zh_TW
dc.contributor.authorChang, Tao-Chien_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T06:26:59Z-
dc.date.available2014-06-06T06:26:59Z-
dc.identifierU0005-1508200610021100zh_TW
dc.identifier.citation[1] 庫海摘编, “半導體發光二極體的歷史及其作用,”北京庫海 偉業科貿發展中心, 2006. [2] 林志勳, “高亮度LED市場發展趨勢與未來展望, www.challentech. com.tw, pp. 1-3, 2004. [3] G. B. Stringfellow, “High Brightness Light Diode,” Academic Press Inc. Boston, pp. 149-150, 1997. [4] H. Sugawara, M. Ishikawa, and G. Hatakoshi, “High Efficiency InGa- AlP/GaAs Visible Light Emitting Diodes,” App. Phys. Lett. Vol. 58, pp. 1010-1012, 1991. [5] R. D. Dupuis and P. D. Dapkus, “Room Temperature Operation of Ga1-AlxAs/GaAs Double-heterostructure Laser Grown by Metal Organic Chemical Vapor Deposition,” Appl. Phys. Lett. Vol. 31, pp. 466-468, 1997. [6] 白杉, “革命性的LED照明,“ www.ye2000.com.tw, 2002. [7] 江家雯, “LED’s Bright Feature,” 工業技術研究院, 工業技術與資訊174期, pp. 10-12, 2006. [8] 方志烈, ”InGaAlP超高亮度發光二極體,” 半導體光電, 第15卷, 第3期, 1994. [9] I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, Appl. Phys. Lett. Vol. 62, pp. 131-132, 1993. [10] 史光國, “現代半導體發光及雷射二極體材料技術, ” 全華科技, 第三章, pp. 57-59, 2001. [11] 史光國, “半導體發光二極體及固體照明, ” 全華科技, 第二章, pp. 19-45, 2005. [12] R. Windisch and C. Rooman, “Impact of Texture-enhanced Trans- mission on High-efficiency Surface-textured Light Emitting Diodes, ” Appl. Phys. Lett. Vol. 79, pp. 2315-2317, 2001. [13] 陳澤澎, 張智松, 張豪麟, “用於發光元件之粗化介面,” 中華民國專利137366號, 2001. [14] W. N. Carr and G. E. Pittman, “One-watt GaAs p-n Junction Infrared Source,” Appl. Phys. Lett. Vol. 3, pp. 173-175, 1963. [15] 施敏原著, 黃調元譯著, “半導體元件物理與製程製作技術,"第二版, 高立圖書有限公司, pp. 147-159, 2002. [16] A. Zukauskas, M. S. Shur, and R. Caska, "Introduction to Solid State Lighting, ” Wiley Interscience, New York, 2002. [17] C. K. Kwok and C. C. Chan,“Designing an External Efficient of Over 30% for Light Emitting Diode,”IEEE Lasers and Electro Optics Society Annual Meeting, Vol. 1, pp. 187-188, 1998. [18] E. H. Li, C. C. Chan, and C. K. Kwok,“Optimization of Textured Surface Light Emitting Diode,”IEEE Hong Kong Electron Devices Meeting Proceedings, pp. 6-9, 1998. [19] 史光國, “現代半導體發光及雷射二極體材料技術,"全華科技, 第四章, pp. 1-10, 2001. [20] 鄭玉鉦, 宋獎喜, 吳登峻, “發光二極體光度與色度之量測特性分析,” 工業技術研究院量測技術發展中心教材, pp. 4-17, 2004.zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/4091-
dc.description.abstract本論文使用化學濕式蝕刻的技術,對磷化鋁銦鎵(AlGaInP)發光二極體進行其視窗層之表面粗化,提昇發光二極體外部出光效率,並有效增加發光二極體內部產生的光射出,而減少光的全反射,結果發現在注入電流20 mA電壓為2.15 V,其增加了30 %的出光效率。 研究AlGaInP發光二極體的光電特性,發現視窗層表面粗糙度從48 nm~151 nm時,與粗化前之外部出光效率相比,在注入電流20 mA電壓為2.15 V其增加外部出光效率從7%到31%,順向電壓可以控制在 2.4 V以下,而漏電流也可以控制在0.1 nA以下,可見粗化並不會影響電流、電壓特性。值得一提的是將元件經過200個小時50 mA老化壽命可靠性試驗,發現元件的亮度和順向電壓未超過基本值的20%範圍。zh_TW
dc.description.abstractA surface-roughing technique, employed by chemical wet etching, was studied for the light extraction efficiency of the AlGaInP light emitting diodes (LEDs). The roughing technique used in this dissertation had been effectively reduced the total internal reflection in the LED structure. It results in ~ 30% increasing of external quantum efficiency at 20 mA. The detailed electrical and optical properties of the AlGaInP LEDs were investigated. It was found that the LEDs with roughened surface 48 nm to 151 nm present the output efficiency 7% to 31% at 20 mA as compared with LED with flat surface. The forward voltage was controlled under 2.4 V and current leakage was controlled under 0.1 nA, indicating the absence of the degradation in the electrode contacts. Meanwhile, a reliability test was performed. The deviation of the decrease in light intensity and forward voltage was found within 20% after operating at 50 mA after 200 hours. The test shows that the surface-roughing technique has no significant effect on the device reliability.en_US
dc.description.tableofcontents審核頁 授權頁 誌謝…………………………………………………………………Ⅰ 摘要…………………………………………………………………Ⅱ Abstract……………………………………………………………Ⅲ 目錄…………………………………………………………………Ⅳ 圖目錄………………………………………………………………Ⅵ 第一章 緒論 1-1 發光二極體歷史演進簡介……………………………………1 1-2 改善發光二極體外部出光效率的方法簡介…………………2 1-2-1 使用厚的窗口層作電流分佈………………………………3 1-2-2 有表面織狀結構或粗糙面…………………………………4 1-2-3 幾何形狀改變之結構………………………………………5 1-2-4 半圓形球面及掩埋半圓柱鏡面……………………………6 1-3 研究動機………………………………………………………6 第二章 發光二極體理論簡介 2-1 發光二極體發光原理簡介……………………………………7 2-2 提高外部量子效率之理論模型………………………………8 2-3 發光二極體之光取出效率計算 ……………………………10 第三章 元件製程與特性量測 3-1 粗化元件製作 ………………………………………………14 3-1-1 磷化鋁銦鎵試片之磊晶結構 ……………………………14 3-1-2 試片之清洗 ………………………………………………14 3-1-3 P型金屬接觸電極之製作…………………………………15 3-1-4 表面粗化 …………………………………………………16 3-1-5 背面N型金屬接觸電極之製作……………………………17 3-2 元件切割 ……………………………………………………18 3-3 元件打線與封裝 ……………………………………………18 3-4 元件特性量測 ………………………………………………19 第四章 結果與討論 4-1 前言 …………………………………………………………20 4-2 改變時間參數分析表面粗糙度 ……………………………20 4-3 光強度分析 …………………………………………………22 4-4 粗化GaP之光場分佈分析……………………………………23 4-5 經粗化後發光二極體之壽命測試 …………………………24 第五章 結論………………………………………………………25 參考文獻 …………………………………………………………27zh_TW
dc.language.isoen_USzh_TW
dc.publisher精密工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1508200610021100en_US
dc.subjectAlGaInPen_US
dc.subject磷化鋁銦鎵zh_TW
dc.subjectsurface-roughingen_US
dc.subjectexternal quantum efficiencyen_US
dc.subject表面粗化zh_TW
dc.subject外部量子效率zh_TW
dc.title粗化視窗層對磷化鋁銦鎵發光二極體亮度影響之研究zh_TW
dc.titleEffects of roughened window layer on the characteristic of AlGaInP light emitting diodesen_US
dc.typeThesis and Dissertationzh_TW
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