請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/41011
標題: Highly Selective Cu Electrodeposition for Filling Through Silicon Holes
作者: Dow, Wei-Ping
Lu, Chun-Wei
Lin, Jing-Yuan
Hsu, Fu-Chiang
出版社: The Electrochemical Society
摘要: In this work, a copper plating formula that can directly and selectively fill the through silicon holes (TSHs) for 3D chip stacking packaging was developed. The copper plating technology reduced and simplified the process steps for fabricating through silicon vias (TSVs) and TSHs. The highly selectivity of copper fill in the TSHs also reduced the manufacture cost of 3D chip stacking packaging, because the copper plating technology reduced the loading of a post-copper chemical mechanical polishing (CMP) and did not need a post-thermal annealing treatment. The copper plating formula was very simple, just containing single organic additive.
URI: http://hdl.handle.net/11455/41011
ISSN: 1099-0062
顯示於類別:化學工程學系所

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