Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4107
標題: 藉由視窗層粗化以提昇磷化鋁銦鎵發光二極體外部量子效率之研究
Investigation of Improving External Quantum Efficiency of AlGaInP-based LEDs by Roughened Window Layer
作者: 梁永隆
Liang, Yung-Lung
關鍵字: surface-textured
表面粗化
AlGaInP LED
Polystyrene sphere
磷化鋁銦鎵發光二極體
聚苯乙稀奈米球
出版社: 精密工程學系所
引用: [1] G. B. Stringfellow and M. George Craford, “High brightness light emitting diode,” Academic Press Inc. Boston, pp. 149-161 (1997). [2] R. D. Dupuis and P. D. Dapkus, “Room temperature opearation of GaAlAs/GaAs double heterostructure lasers grown by metalorganic chemical vaper deposition,” Appl. Phys. Lett., vol. 31, pp. 466-468 (1977). [3] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single quantum well structure light emitting diodes,” Jpn. J. Appl. Phys., vol. 34, pp. 1332-1335 (1995). [4] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light emitting diodes,” Appl. Phys. Lett., vol. 57, pp. 2937-2939 (1990). [5] D. A. Vanderwater, I. H. Tan, G. E. Hofler, D. C. DeFevere, F. A. Kish, “High brightness AlGaInP light emitting diodes,” IEEE. vol. 85, pp. 1752-1764 (1997). [6] F. A. Kish et al. “Very high efficiency semiconductor wafer bonded tranasparent substrate (AlxGa1-x)0.5In0.5P/GaP light emitting diodes,” Appl. Phys. Lett. vol. 64, pp. 2839-2841 (1994). [7] S. C. Wei et al. “AlGaInP light emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. vol. 75, pp. 3054-3056 (1999). [8] N. F. Gardner et al. “1.4 times efficiency improvement in transparent substrate (AlxGa1-x)0.5In0.5P light emitting diodes with thin active regions,” Appl. Phys. Lett. vol. 74, pp. 2230-2232 (1999). [9] H. Sugawara, K. Itaya et al “High brightness InGaInP green light emitting diodes,” Appl. Phys. Lett. vol. 61, pp. 1775-1777 (1992). [10] K. H. Huang etal. “Two fold efficiency improvement in high performance AlGaInP light emitting diodes in the 555~620 nm spectral region using a thick GaP window layer,” Appl. Phys. Lett. vol. 61, pp. 1045-1047 (1992). [11] H. Sugawara, K. Itaya, M. Ishikawa and G. Hatakoshi, “High efficiency InGaAlP visible light emitting diodes,” Jpn. J. Appl. Phys. vol. 31, pp. 2446-2451 (1992). [12] W. N. Carr and G. E. Pittman, “One watt GaAs p-n junction infrared source,” Appl. Phys. Lett. vol. 3, pp. 173-175 (1963). [13] A. R. FrankLin and R. Newman, “Shaped electroluminescent GaAs diodes,” Appl. Phys. Lett. vol. 35, pp. 1153-1155 (1964). [14] M. R. Krames et al. “High power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. vol. 75, pp. 2365-2367 (1999). [15] M. Broditsky et al. “Light extraction from optically pumped light-emitting diode by thin slab photonic crystals,” Appl. Phys. Lett. vol. 75, pp. 1036-1038 (1999). [16] 施敏 原著, 黃調元 譯著, “半導體元件物理與製程技術,”第二板, 高立圖書有限公司,台北, 台灣, pp. 104-110 (2002). [17] 施敏 原著, 黃調元 譯著, “半導體元件物理與製程技術,”第二板, 高立圖書有限公司,台北, 台灣, pp. 192-198 (2002). [18] Dieter K. Schroder, “Semiconductor material and device characterization,”pp. 190-195 (1990). [19] V. M. Burmedez, “Study of oxygen chemisorption on the GaN(0001)-(131) surface,” J. Appl. Phys. vol. 80, pp. 1190-1200 (1996). [20] 史光國, “現代半導體發光及雷射二極體材料技術,” 全華科技, (2001). [21] 柳克強, “真空技術與應用,” 行政院國家科學委員會精密儀器發展中心, pp. 511-516 (2002). [22] R. Windisch, “impact of texture enhanced tramission on high efficiency surface textured light emitting diodes,” Appl. Phys. Lett. vol. 79, pp. 2315-2317 (2001).
摘要: 磷化鋁銦鎵發光二極體因p-GaP視窗層折射率為3.5與空氣(n=1)差異太大,而容易形成光的全反射,如此一來發光效率將大幅降低,為了改善此光學特性對發光效率的影響,本論文藉由聚苯乙烯奈米球為自然光罩並經由感應式耦合電漿蝕刻系統蝕刻聚苯乙烯奈米球之間的空隙而達到表面粗化之目的,進而減少光在發光二極體裡全反射的機率,本研究主題為藉由控制不同的ICP蝕刻功率與蝕刻時間,探討p-GaP表面粗糙度對發光亮度之影響。 經由感應式耦合電漿蝕刻系統蝕刻後,其p-GaP表面有點類似圖形轉移而呈現出p-GaP奈米柱,利用光學模擬軟體建立經由不同ICP蝕刻參數的模型並分析光取出率的差異性,其模擬結果為p-GaP最佳的蝕刻深度約為600 nm,而直徑約為300~320 nm。 最後量測元件之光電特性及封裝後之輸出功率,在最佳的ICP蝕刻條件下,經由封裝後並注入20 mA之電流量測原始以及具奈米柱之p-GaP/AlGaInP/GaAs LEDs之輸出功率分別為1.64與2.15 mW,因此可知具奈米柱之p-GaP/AlGaInP/GaAs LEDs可使輸出功率增加約30%。
In conventional AlGaInP light-emitting diodes, the external efficiency is limited by total internal reflection at the p-GaP/air interface. The refractive indexes of p-GaP and air are 3.5 and 1.0, respectively. In this study, the surface roughened p-GaP was obtained by natural lithography technique with polystyrene spheres as the mask under different ICP-RIE etching condition. The scanning electron microscope and atomic force microscope were used to analysis the textured of p-GaP surface. After ICP-RIE etching, the surface morphology of the p-GaP surface also appears nano-pillars. In order to analyzed the light extraction efficiency from surface-textured p-GaP/AlGaInP/GaAs LEDs quantitatively, employ a Trace-Pro simulation of the photon trajectories under different ICP-RIE etching condition,the simulation results of optimization textured depth with nano-pillars diameter are about 600 nm and 300 nm. The output power of the p-GaP/AlGaInP/LEDs with and without surface texturing is respectively 1.64 and 2.15 mW at 20 mA. The LEDs fabricated using the surface-textured p-GaP surface produced an output power that exceeded that of the original LED by about 30% at 20 mA.
URI: http://hdl.handle.net/11455/4107
其他識別: U0005-2508200616313200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2508200616313200
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