Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4112
標題: 高功率覆晶式氮化鎵發光二極體之研究
A Study of High Power Flip-Chip GaN Light-Emitting Diodes
作者: 黃森彬
Huang, Sen-Bin
關鍵字: High Power Flip Chip GaN LEDs
高功率覆晶式氮化鎵發光二極體
Sub-mount
Gold stud bump.
搭載基板
金球
出版社: 精密工程學系所
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摘要: 本論文以研究大面積高功率覆晶式氮化鎵發光二極體(LED)製程技術,用以提升大面積高功率覆晶式氮化鎵LED之發光亮度及改善發光效率為主要目標。在覆晶發光二極體製作方面,以鎳(Ni)導電薄膜代替氧化銦錫(ITO)導電薄膜,且利用快速熱退火的方式,將Ni導電薄膜的穿透率(91.8%)製作出在波長465 nm下比ITO的穿透率(90.7%)還高,另一方面在覆晶搭載基板方面,以矽基板做為主要研究的搭載基板,在矽基板的反射鏡製作上,以氧化矽、鋁、鉻等材料組成高反射率性、高黏著性材料之鏡面,製作出具良好散熱特性良好的搭載基板。其中SiO2用以絕緣電路,鉻當作附著層,鋁則是提供反射率。在覆晶鍵合方面,則是選用熱超音波黏著方式,經過已調整的鍵合參數(壓力、功率),再搭配推力機實際測試推力,並再使用掃描式電子顯微鏡進行微結構觀察,觀察出晶粒最佳化鍵合時的金球外形與微結構變化,以及金球殘留在搭載基板與晶粒上的情形。 而高功率覆晶式LED的搭載基板再經過適當電路設計後,成功製作出四顆晶粒同時在同ㄧ搭載基板上的覆晶式LED模組,成功增加了因打線面積所失去的發光面積,而單顆與四合一發光二極體模組在波長465 nm下經覆晶接合後,封裝至TO-39上,分別輸入350 mA與700 mA時,正向光亮度約為4500 mcd與14000 mcd,而功率平均值約為190 mW與580 mW。 經過本論文實驗之結果,大面積高功率覆晶式發光二極體比一般高功率LED,功率提昇了近12 %,抗靜電能力提昇近1.2倍,而鍵合強度則是比未調整前提升近1.8倍,可說製造出了更高功率、更佳可靠度、更佳品質的產品,讓此產品有更佳的市場競爭力。
In this study, the characteristics of power flip chip light emitting diode (LED) have been studied for enhancing output power and improving efficiency to our experiment target. In the fabrication of power flip chip LED, the Ni thin film was instead of ITO thin film. After the RTA process, the transmittance of Ni can be enhanced to (91.8% ) at 465 nm wavelength. It can be completely replaced the ITO thin film at the 465 nm LED (90.7%) fabricated. In the sub-mount process, the Si (Silicon) was used as a substrate and the SiO2, Cr, and Al were use as the reflector mirror materials, SiO2 is used as an insulate, Cr is used as an adhesion layer, and Al is used as an reflector layer. Indeed, the flip chip bonding parameter (bonding force bonding Power) was not only be turned, but also Here, the bonded properties of the gold stud bump microstructure(ball shear & die shear) were evaluated by surface electronic microscope . On the other hand, there are 4 LEDs to be packaged into one Flip Chip lamp.It was found that the brightness at 465 nm wavelength are 4500 mcd and 14000 mcd for 350 mA,700 mA, respectively. and the average output power 190 mW and 580 mW was measured. The main contribution of this study is that we provide a new power chip which make the output power 12% enhanced, Electro Static Discharge protection capability 1.2 times improved and the bonding adhesion comparison to initial adhesion is 1.8 times increased. Compared to old products, we create high power, high reliability, high quality product which also advance the market competition power of new ones.
URI: http://hdl.handle.net/11455/4112
其他識別: U0005-2608200611450400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2608200611450400
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