Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4115
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dc.contributor武東星zh_TW
dc.contributor富振華zh_TW
dc.contributor.advisor洪瑞華zh_TW
dc.contributor.author林義峰zh_TW
dc.contributor.authorLin, Yi-Fengen_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T06:27:03Z-
dc.date.available2014-06-06T06:27:03Z-
dc.identifierU0005-2708200609491000zh_TW
dc.identifier.citation[1] S. Yoshida, S. Misawa and S. Gonda, Appl. Phys. Lett. 42, 427 (1983). [2] H. Amino, N. Sawaki, I. Akasaki and Y. Toyota, Appl. Phys. Lett. 48, 353 (1986). [3] H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys. Part 2 28, L2112 (1989). [4] S. Nakamura, M.Senoh, S. Nagahata, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho, Jpn. J. Appl. Phys. Lett. 36 (1997). [5] B. Gerald,“Organometallic Vapor-Phase Epitaxy Stringfellow”, Academic Press, 105 (1999). [6] 莊惠雯, “氮化銦鎵/氮化鎵多重量子井的光激發光譜”, 中央大學研究所碩士論文, (1999). [7] 史光國 著, “現代半導體發光及雷射二極體材料技術”, 全華科技圖書股份有限公司, 1-1~2-79 (2001). [8] 史光國 著, “現代半導體發光及雷射二極體材料技術進階篇”, 全華科技圖書股份有限公司, 1-1~2-136 (2004). [9] 游志樸 著, “半導體材料”, 新京文開發公司, 1 ~ 280 (2003). [10] 羅文雄等三人譯, “半導體製造技術”, 滄海發行, 269~672 (2003). [11] 施敏 著, 黃調元 譯, “半導體元件物理與製作技術”, 交大出版社, 501~732 (2002).zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/4115-
dc.description.abstract本技術論文著重於研討4吋藍寶石基材之氮化鎵磊晶晶片,並根據4吋磊晶晶片的各種參數及結果與2吋磊晶晶片做比較,在磊晶成長方面,本研究將4吋晶片與2吋晶片在同一個批次長晶,晶粒尺寸使用8 × 14 mil2與13 × 20 mil2,並作後續的電性及晶膜均勻度測試,實驗結果其電性方面,以4吋基板成長之LED磊晶膜製作之晶粒當注入20(mA)電流時,就4吋磊晶片之試片H為例其發光亮度為61.36(mcd),順向偏壓為3.27 (V) 此時發光平均波長λ為462.4(nm),相較於成長在2吋基板之氮化鎵發光二極體元件注入電流為20(mA)時發光亮度為56.81(mcd),順向偏壓為3.08(V),發光平均發光波長為464(nm),電性結果顯示兩片基板是相差不多的;此外,若以光激發光譜儀量測磊晶膜發光波長,就4吋磊晶片之試片H為例,其分佈落在457~466(nm)之間,範圍波長差為9(nm),在厚度方面,結果落在6.19~5.68(um)之間,範圍相差有0.51(um);製程方面,由於目前公司製程多為2吋晶圓之參數,本論文同時亦建立4吋晶圓之製作參數,分別就光阻塗佈的測試、蝕刻的測試進行參數之建立,其比較結果塗佈光阻的方式使用螺旋狀塗佈法會較其他光阻塗佈法均勻,在後段製程,四吋的面積大於2吋許多,在研磨切割方面,一般2吋晶片研磨時都有可能研磨失敗造成破片,而4吋晶片因為晶片本身面積大應力大及研磨設備限制結果都不太理想,需要更多的測試來建立研磨參數;本論文最大貢獻為建立4吋LED晶圓之磊晶與元件製作參數並證明4吋氮化鎵磊晶成長與元件製作之可行性。zh_TW
dc.description.abstractIn this thesis, GaN based LED were fabricated through 4 inch sapphire substrate. During the growth, 4 inch substrate and 2 inch substrate were put at the same batch by metal-organic chemical vapor deposition. After growth, 4 inch EPI-wafer and 2 inch EPI-wafer were fabricated into 8×14mil2 and 13×20mil2 LED chip individually. The chips result shown that by using 20 mA current, intersity (Iv) of 4 inch wafer was 61.36 mcd at wavelength 462.4 nm and forward voltage (Vf) was 3.27 V. Compared with 2 inch wafer the electrical characteristics were almost the same. The Iv of 2 inch wafer was 56.81 mcd at 464 nm and forward voltage was 3.08 V. Wavelength distribution of 4 inch wafer was in a range of 457~466 nm with wavelength distribution of 9 nm. GaN layer thickness variation of 4 inch wafer was from 5.68 um to 6.19 um. 0.51 um difference on single wafer. Form the result. We believe 4 inch wafer could be mass production. In chip process. we conclude that helical coating was more uniform from the result of photo-resistant coating and etching testing. In grinding process, The stress was much larger for 4 inch wafer due to the 4 times of the area. So it's very easy to cause crack in grinding process. We suggest to fine tune grinding condititon and overcome the limitation of equipment. Therefore, mass production of 4 inch wafer should be feasible.en_US
dc.description.tableofcontents封面內頁………………………………………………………………………Ⅰ 審核頁………………………………………………………………………..Ⅱ 授權頁…………………………………………………………………………Ⅲ 誌謝……………………………………………………………………………Ⅳ 摘要……………………………………………………………………………Ⅴ Abstract………………………………………………………………………. Ⅵ 目錄……………………………………………………………………………Ⅶ 表目錄…………………………………………………………………………Ⅸ 圖目錄………………………………………………………………………...XI 第一章 緒論……………………………………………………………………1 第二章 實驗設備與流程………………………………………………………4 2.1實驗設備………………………………………………………………4 2.2研究流程………………………………………………………………5 2.2.1磊晶製程建立………………………………………………….5 2.3量測設備……………………………………………………………….6 2.4其他相關設備………………………………………………………….8 第三章 實驗結果與討論…………………………..………………….……....12 3.1磊晶製程實驗結果量測………………………….…………………..12 3.1.1 4吋磊晶片與2吋磊晶片結晶特性………………………...12 3.1.2波長與厚度量測………………………………………………14 3.2製程部分……………………………………………………………...15 3.2.1.前段製程……………………………………………………….15 3.3後段製程…………………………………………………………..19 3.3.1切割前後電性量測………………………………………...…20 3.4實驗結果討論…………………………………………………..……21 第四章 結論…………………………………………………………..………23 參考文獻……………………………………………………………..………..25zh_TW
dc.language.isoen_USzh_TW
dc.publisher精密工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2708200609491000en_US
dc.subject4 inch sapphire substrateen_US
dc.subject4吋藍寶石基材zh_TW
dc.subjectGaNen_US
dc.subjectLEDen_US
dc.subject氮化鎵zh_TW
dc.subject發光二極體zh_TW
dc.title四吋氮化鎵磊晶片特性之研究zh_TW
dc.titleA Study on Characteristics of 4 inch GaN Epitaxial Wafersen_US
dc.typeThesis and Dissertationzh_TW
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