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標題: 爐管與快速熱退火製程對磷化鋁鎵銦發光二極體背金結構的影響
Effects of Furnace and Rapid Thermal Treatments on Back Contact Structure of AlGaInP Light-Emitting Diodes
作者: 張律凡
Chang, Lu-Fang
關鍵字: AlGaInP, Light-emitting diodes
Back-contact resistance
Rapid thermal annealing
出版社: 精密工程學系所
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摘要: 本論文主要針對四元磷化鋁鎵銦發光二極體的背金結構電特性做研究與分析,希望能進一步提升發光二極體之元件特性。在實驗中我們在砷化鎵基板背面進行蒸鍍背金結構,而此背金結構是由三層金屬所組成,分別為金/鍺(12%)金(88%)/金,我們控制最外層金的厚度來量測與觀察特徵接觸電阻的大小,同時改變爐管加熱的溫度與快速熱退火系統做比較,背金結構之元素分佈比較可由歐傑電子分析得到,而掃描式電子顯微鏡可分析其兩者之間的表面形貌差異。在本論文的實驗範圍中,我們可以發現背金結構之各層厚度、爐管加熱溫度皆與特徵接觸電阻有很大的關連性,我們可以藉由改變背金結構厚度與爐管的溫度以達到最佳的歐姆接觸狀況,再利用傳輸線模型算出各組的特徵接觸電阻數值,當選擇爐管溫度410
The motivation of this study is to investigate and improve the electrical characteristics of back-contact metal structure for AlGaInP/GaAs light-emitting diodes (LEDs). The Au/AuGe(88/12)/Au back-contact metal structure was deposited on the GaAs substrate using an electron-beam evaporator. Various post thermal treatments were employed including conventional furnace and rapid thermal annealing. It was found that the outer Au layer thickness and furnace annealing temperature had large effects on the specific contact resistance. In our experimental range, the sample treated by rapid thermal annealing was found to have higher specific contact resistance than that treated by furnace annealing. A lowest specific contact resistance of 0.086
其他識別: U0005-2808200609464000
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