Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4128
標題: 以矽為主之駐極體電容式麥克風感應器之研發
Development of Si-based electret condenser microphone sensors.
作者: 楊煜椿
Yang, Yu-Chun
關鍵字: electret
駐極體
出版社: 精密工程學系所
引用: [1] Sandia MEMS網站 [2] 精儀中心網站 [3] E. Kälvesten, L. Löfdahl, and G. Stemme, “A Small-Size Silicon Microphone for Measurements in Turbulent Gas Flows,” Sensors and Actuators, vol. 45, pp.103-108, 1994. [4] P. -C. Hsu, C. H. Mastrangelo, and K. D. Wise, “A High Sensitivity Polysilicon Diaphragm Condenser Microphone”, Center for Integrated Sensors and Circuits, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA [5] Quanbo Zou, Zhimin Tan, Zhenfeng Wang, Jiangtao Pang, Xin Qian, Qingxin Zhang, Rongming Lin, Sung Yi, Haiqing Gong, Litian Liu, and Zhijian Li, ” A Novel Integrated Silicon Capacitive Microphone - Floating Electrode “Electret” Microphone (FEEM)”, IEEE J. of Microelectromechanical Systems, vol. 7, no. 2, June, 1998 [6] K. Itoh, VLSI Memory Chip Design, Springer, Jan., 2001 [7] M. M. Mano, Digital Design, Prentice Hall, Aug., 2001 [8] D. Frohman-Bentchkowsky, ” Memory behavior in a floating-gate avalanche-injection MOS(FAMOS)structure,” Applied Physics Letters, pp.332-334, 1971 [9] D. Frohman-Bentchkowsky, ” FAMOS-a new semiconductor charge storage device,” Solid-State Electronics, pp. 517, 1974 [10] H. Iizuka et al., Electrically Alterable Avalanche Injection-Type MOS ROM with Stacked-Gate Structures, IEEE Trans. Electron Devices, ED-23, pp. 379, 1976 [11] E. Takeda, “Hot carrier effect in submicrometer MOS VLSI”, Proc. IEEE, vol. 131, pp. 153, 2000 [12] Y. Nakagome, E. Takeda, H. Kume, and S. Asai, “New observation of hot carrier injection phenomena”, Jpn. J. Appl. Phys. 22-1, pp. 99-102, 1999 [13] Neil H. E. Weste, Kamran Eshraghian, Principles of CMOS VLSI Design: A Systems Perspective, 2nd Ed., Addison-Wesley, 2002 [14] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice Hall, 2001 [15] ISE TCAD Release 10.0
摘要: 在當前一切朝向微小化的時代, MEMS(Micro Electro Mechanical System)麥克風是個順應而生的構思; 雖然麥克風已有成熟的產品, 然而要在矽晶圓上完成一個具有高感度且較佳響應範圍的聲音感應器, 卻是一大挑戰; 因為當感應器愈小則相對地感度也愈差, 為了改善這個問題, 因此需要開發新型的元件, 以便完成駐極體電容式麥克風之感應器。 本研究從建構這個元件開始, 首先就必須考慮如何將電荷注入這個元件的浮置閘(floating gate), 並且還能夠了解注入情況, 如此可達到駐極體之效能而增加感度, 而這部份是其元件之主要結構, 也做為麥克風之背板。 然後再應用微細加工製程的蝕刻終止層(Etch stop layer), 一來可以保護其元件之主要結構, 二來還可以控制深度而形成空腔, 最後放置上極板成為振膜, 形成駐極體式麥克風的感應器, 以便獲得較佳的頻率響應; 因此整合以上之流程, 達成駐極體電容式麥克風的雛形
URI: http://hdl.handle.net/11455/4128
其他識別: U0005-0108200713563200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0108200713563200
Appears in Collections:精密工程研究所

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