Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4136
標題: 透明電極對氮化鎵發光二極體特性之可靠度研究
Effects of Transparent Electrodes on Reliability Issues of GaN-Based Light-Emitting Diodes
作者: 趙培欽
Chao, Pei-Chin
關鍵字: GaN
氮化鎵
Light-Emitting Diodes
Transparent Conducting Layer
Lifetime Test
Transmittance
發光二極體
透明導電層
壽命測試
穿透率
出版社: 精密工程學系所
引用: 參考文獻 [1] G. B. Stringfellow, “High Brightness Light-Emitting Diode,” Academic Press Inc. Boston, p. 392, 1997. [2] 莊賦祥,“藍綠光發光二極體”,科學發展349期,pp. 46-53,2002. [3] S. NaKamura ,“ Ⅲ-Ⅴ Nitride Based Light-Emitting Devices, ” Solid State Communications, Vol. 102, pp. 237-248, 1997. [4] B. Damilano, N. Grandjean, C. Pernot, J. Massies , “ Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells, ” Japanese Jurnal of Applied Physics, Vol. 40, p. 918, 2001. [5] T. Mukai, D. Morita, S. Nakamura, “ High-Power UV InGaN/AlGaN Double-Heterostructure LEDs, ” Journal of Crystal Growth, Vol. 189, pp. 778-781, 1998. [6] E. Kuokstis, J. Zhang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. Shur, “ Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells, ” Physica Status Solidi(b), Vol. 228, pp. 559-562, 2001. [7] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura, “Increase in the Extraction Efficiency of GaN-Based Light-Emitting Diodes via Surface Roughening,” Applied Physics Letters, Vol. 84, p. 855, 2004. [8] 李嗣涔 著, “半導體元件物理",三民書局,台灣,第五章, pp.76-88,1995. [9] E. H. Rhoderick, R. H. Willians, “ Metal-Semiconductor Contact, ” 2nd ed, Oxford University Press, USA, 1988. [10]H. Morkoc, “Nitride Semiconductors and Devices,” Springer, New York, p. 196 , 1999. [11]D.K. Schroder, “Semiconductor Material and Device Characterization”, John Wiley & Sons, New York, p. 102, 1990. [12]V. M. Burmedez, “ Study of Oxygen Chemisorption on the GaN (0001)-(1x1) Surface,” Journal Applied Physics, Vol. 80, p. 1190 , 1996. [13] 王宗華 著, “可靠度工程技術手冊",中華民國品質學會,台灣,pp. 293-318,2003. [14] 柯煇耀 著, “可靠度保証-工程與管理與技術之應用",中華民國品質協會,台灣,2000. [15] 張正忠, “產品加速壽命測試規劃之研究-以8025 無刷直流風扇為例",國立高雄第一科技大學碩士論文,台灣,第10頁,2004. [16] A. Elayed, “Reliability Engineering” , Assison Wesley, New Jersey, 1996. [17] 羅吉宗 著, “薄膜科技與應用",全華科技,台灣,第八章, pp. 65-72,2004. [18] 王建民 主編, “材料分析",中國材料科學學會,台灣,第二十三章, pp. 673-678,2004.
摘要: 中文摘要 本論文主要探討不同透明導電層(鎳/金與氧化銦錫)對氮化鎵發光二極體光電特性之影響並進一步分析其原因,並將完成之氮化鎵發光二極體樣品放入三種不同環境測試條件,分別為室溫(85℃) 常濕(55% R.H.)、高溫(85℃) 常濕(55% R.H.)與高溫(85℃) 高濕(85% R.H.)來進行壽命測試。藉由氮化鎵發光二極體壽命測試之結果來研究發光二極體之順向電壓偏高、漏電流過大及亮度衰減原因,並找出發光二極體穩定性最高之操作環境,最後進行驗證實驗,並針對壽命測試所導致電性異常來進行驗證。從實驗結果中可發現經高溫高濕壽命測試後,氧化銦錫透明導電層的穿透率還是可以保持在83%以上,明顯遠高於鎳/金透明導電層的65%。在片電阻方面,鎳/金透明導電層經壽命測試前、後的片電阻差異為30%,遠高於氧化銦錫透明導電層的15.7%。在薄膜應力方面,鎳/金透明導電層經壽命測試前、後的薄膜應力差異為35%,遠高於氧化銦錫透明導電層的22.7%。從這些實驗結果中可得知在氮化鎵發光二極體中透明導電層氧化銦錫之適用性遠優於鎳/金透明導電層。 經由本論文的研究發現,不同透明導電層材料在氮化鎵發光二極體所呈現的光電特性差異甚大,因而在溫度、濕度及驅動電流之變因下建立了其壽測行為之分析資料,並且驗證出氧化銦錫透明導電層材料應用於氮化鎵發光二極體之可靠度較佳,可以做為對氮化鎵發光二極體產品選用上之參考依據,進而對此產品做最佳化之設計。
Abstract This thesis describes the effects of the transparent conducting layers (TCL) on the characteristics of GaN-based light-emitting diodes (LEDs). Two kinds of TCLs were used in this research, i.e. nickel-gold (Ni-Au) and indium-tin oxide (ITO). The performance of the GaN LED samples after three life test conditions such as room temperature (22℃)/room humidity (55% R.H.), high temperature (85℃)/ room humidity (55%R.H.) and high temperature (85℃)/high humidity (85% R.H.) is presented. From the lifetime test results, the mechanism of several typical failure cases such as high forward voltage, over leakage current and luminance intensity decay were discussed. After lifetime test, it was found that the transmittance of the ITO film (83%@470 nm) is higher than that of the Ni/Au TCL (65%). The sheet resistance of Ni/Au TCL (30%) is higher than that ITO TCL (15.7%). Furthermore, the thin-film stress of Ni/Au TCL (35%) is higher than ITO TCL (22.7%). Based on these results, it was confirmed that the ITO TCL is better than Ni/Au TCL for the GaN-based LED applications. From the study of this thesis, the TCL effects on the GaN-based LED performance in terms of life time data under various temperatures, humidity and driving current conditions were established. This can benefit the device reliability and provide more information about the optimization design of the GaN-based LEDs.
URI: http://hdl.handle.net/11455/4136
其他識別: U0005-1507200721273000
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1507200721273000
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