Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4147
標題: 以低應力振膜材料研製高感度 之駐極體組合式微麥克風
Investigation of High Sensitive Electret Condenser Microphones Using Low Stress Diaphragms
作者: 王冠儒
Wang, Kuan-Ru
關鍵字: electret condenser microphone
駐極體電容式麥克風
wafer transfer technology
sacrificial layer
frequency response
脫離技術
犧牲層
頻率響應
出版社: 精密工程學系所
引用: [1] http://discoverychannel.com.tw/technology/history/index.shtml [2] http://users.pandora.be/oldmicrophones/microphone_history.htm [3] D. Hohm and R. Gerhard-Multhaupt, “Silicon-dioxide electret transducer,” Journal of The Acoustical Society America, vol. 75, pp. 1297-1298, 1984. [4] A. J. Sprenkels, R. A. Groothengel, A. J. Verloop, and P. Bergveld, “Development of an electret microphone in silicon,” Sensors and Actuators, vol. 17, pp. 509-512, 1989. [5] J. H. Jerman, D. J. Clift, and S. R. Mallinson, “A Miniature Fabry Perot Interferometer with a Corrugated Silicon Diaphragm Support,” Tech. Digest IEEE Solid-State Sensor and Actuator Workshop, pp. 140-144, 1990. [6] J. Bergqvist and F. Rudolf, “A new condenser microphone in silicon, “ Sensors and Actuators A, vol.21, pp. 123-125, 1990. [7] J. Bergqvist, F. Rudolf, J. Maisano, F. Parodi, and M. Rossi, “A silicon condenser microphone with a highly perforated backplate,” Digest Tech. Papers, Transducer’91, pp. 266-269, 1991. [8] P.R. Scheeper, A,G.H. van der Donic, W. Olthuis, and P. Bergveld, “ Fabrication of silicon condenser. microphones using single wafer technology, ” IEEE J. Microelectrornech. Syst., vol. 1, pp. 147-154, 1992. [9] P. R. Scheeper, W. Olthuis, and P. Bergveld, “The design, fabrication, and testing of corrugated silicon nitride diaphragms,”IEEE. Microelectrornech. Syst., pp. 36-42, 1994. [10] P. C. Hsu, C. H. Mastrangelo, and K. D. Wise, 1998, “A High Sensitivity Polysilicon Diaphragm Condenser Microphone”, Conference Record on IEEE 11th International Workshop on Micro Electro Mechanical Systems, pp. 580-585, 1998. [11] P. R. Scheeper, W. Olthuis, and P. Bergveld, “The design, fabrication, and testing of corrugated silicon nitride diaphragms,” Journal Microelectromechanical Systems, vol. 3, 1, pp. 36-42, 1994. [12] W. Kuhnel and G. Hess, “A silicon condenser microphone with structured backplate and silicon nitride membrane,” Sensors and Actuators, vol. 30, pp. 251-258, 1992. [13] M. Pedersen, W. Olthuis, and P. Bergveld, “A polymer condenser microphone on silicon with on-chip CMOS amplifier,” International Conference Solid-State Sensors and Actuators, pp. 445-446, 1997. [14] W. H. Hsieh, T. Y. Hsu, and Y. C. Tai, “A micromachined thin-film teflon electret microphone,” International Conference Solid-State Sensors and Actuators, pp. 425-428, 1997. [15] R. Kressmann, M. Klaiber, and G.Hess, “Silicon condenser microphones with corrugated silicon oxide/nitride electret membranes,” Sensors and Actuators, pp301-309, 2002. [16] W. J. Wang, R. M. Lin, and D. G. Guo, “Study of single deeply corrugated diaphragms for high-sensitivity microphones,” Journal Micromech. Microeng.pp184-189, 2003. [17] 袁宗廷, 高感度電容式矽微麥克風之研製, 國立中興大學精密 工程研究所碩士論文, 民國94年. [18] R. Schellin and G. Hess, “A silicon subminiature microphone based on piezoresistive polysilicon strain gauges“, Sensors and Actuators A, vol. 32, pp. 555-559, 1992. [19] M. Royer, J. O. Holmen, M. A. Wurm, O. S. Aadland, and M. Glenn, “ZnO on Si Integrated Acoustic Sensor,” Sensors and Actuators, vol. 4, pp. 357-362, 1983. [20] 邢泰剛, 微機電系統技術與應用, 行政院國家科學委員會精密儀器中心出版, pp. 544-562, 民國92年. [21] P. R.Scheeper, A. G. H. van der Donk, W. Olthuis, and P. Bergveld, “Fabrication of silicon condenser microphone using single wafer technology”, J. Microelectromech. Syst. vol. 1, pp. 147-154 , 1992. [22] T. Y. Hsu, W. H. Hsieh, Y. C. Tai, and K. Furutani, “A Thin-Film Teflon Electret Technology for Microphone Applications,” Tech, Dig. Solid-State Sensors and Actuator Workshop, pp. 235-239, 1996. [23] W. H. Hsieh, T. Y. Hsu, and Y. C. Tai, “A Micromachined Thin film Teflon Electret Microphone,” Int. Conf. on Solid-State Sensors and Actuators, pp. 425-428, 1997. [24] W. H. Hsieh, T. J. Yao, and Y. C. Tai, “A High Performance MEMS Thin-film Teflon Electret Microphone,” Int. Conf. on Solid-State Sensors and Actuators (Transducers ''99), pp. 1064-1067, 1999. [25] Microphone Engineering Handbook, Edited by Michael Gayford, Butterworth-Heinemann, Oxford, 1994. [26] J. Bergqvist, “Finite-element modeling and charac-terization of a silicon condenser microphone with a highly perforated backplate,” Sensors and Actuators A, vol.39, pp. 191-200, 1993. [27] W. H. Hsieh, T. Y. Hsu, and Y. C. Tai, “Micromachined thin-film teflon electret microphone,” Int. Conf. Solid-State Sensors and Actuators (Transducer 97), pp. 425-428, 1997. [28] M. Pedersen, W. Olthuis, and P. Bergveld, “A polymer condenser microphone on silicon with on-chip CMOS anplifier,” Int. Conf. Solid-State Sensors and Actuators (Transducers 97), pp. 445-446, 1997. [29] M. Mullenborn, P. Rombach, U. Klein, K. Rasmussen, J. F. Kuhmann, M. Heschel, et al., “Chip-size-packaged silicon microphones”, Sensors and Actuators A, vol. 92, pp. 23-29, 2001. [30] M. P. Norton, “Fundamentals of Noise and Vibration Analysis for Engineer”, pp. 197-200, New York:Cambridge University Press, 1969. [31] A. G. H. Van der Donk, P. Bergveld and J. A. Voorthuyzen, “Optimal design of electret microphone MOSFET preamplifier”, J. Acoust. Soc. Am., vol. 91, pp. 2261-2269, 1992. [32] A. G. H. Van der Donk, J. A. Voorthuyzen and P. Bergveld, “General considerations of noise in microphone preamplifiers”, Sensors and Actuators A, vol. 25, pp. 515-520, 1991. [33] W. R. Bevan, R. B. Schulein and C. E. Seeler, “Design of a studio-quality condenser microphone using electret technology”, J. Audio Eng. Soc., vol. 26, pp. 947-957, 1978. [34] http://www.s-t.com.tw/front/bin/home.phtml [35] http://www.corecn.com.tw/ch2_conver.html [36] http://www.gersteltec.ch/IMAGES/GM_1040_Datasheet_1.1.pdf [37] http://www.a-m.de/englisch/lexikon/siliciumnitrid.htm [38] 游尚樺, 適用於組合式駐極體矽微麥克風之犧牲層技術之研究, 國立中興大學精密工程研究所碩士論文, 95年. [39] B. Gross, “Electret research-stages in its developemnt,” Proc. 5th Int. IEEE Symp. pp. 9-46, 1985. [40] J. L. Vossen, W. Kern, “Thin film processes,” Academic Press, New York, pp. 131-136, 1978. [41] M. Fulsner, A. Dehe, and R. Lerch, “Analytical Analysis and Finite Element Simulation of Advanced Membranes for Silicon Microphones,” IEEE Sensors Journal, vol.5, pp. 1-7, 2005.
摘要: 論文主要利用脫離技術結合微機電與半導體製程技術來製作高感度的組合式駐極體電容式微麥克風,其組成元件主要由振膜結構、駐極體背板、空間間隙層三者所構成。此技術優點為矽基材可重複回收使用、脫離時間短、可避免單晶片使用體型微加工製程繁雜又不易製作的缺點與雙晶片製程高溫鍵合可能影響整合IC電路之缺點。所以本研究主要是利用易移除之犧牲層,來發展低成本、高靈敏度的振膜結構。 駐極體電容式微麥克風的靈敏度主要取決於電感度與振膜的機械感度。高的機械感度可以由振膜材料的機械特性所決定。為了獲得高靈敏度的微麥克風,我們選用低應力的振膜材料Parylene與Polyimide配合大面積的振膜尺寸來製作振膜晶片。脫離後的振膜結構(直徑=1900 µm、厚度=1.05 µm),於1 kHz之取樣頻率,並由駐極體材料所提供的-304 V偏壓下所量測,可得到-38.1 dBV/Pa的增益輸出,相當於全感度約為12.45 mV/Pa。相較於已市售之STAR microphone 型號MAA-03A-L與KNOWLES microphone型號MB3015ASC-2響應值皆為-44 dBV/Pa,感度為6.3 mV/Pa,本論文之感度明顯的較STAR microphone與KNOWLES microphone優良許多。
In this thesis, we have developed a high sensitive assembly electret condenser microphone using wafer transfer technology. An electret microphone mainly consists of three parts: a diaphragm, an electret backplate and a spacer. Moreover, in the previous condenser microphone developments, there were two types of fabrication processes by wafer bonding and single chip fabrication. The cost of wafer bonding process is high, and the high-temperature wafer-bonding technique was not easy compatible with Si circuits. On the other hand, the single chip process was complex and not easy to fabricate. Here, wafer-transferring technique was provided. It could prevent the drawbacks mentioned above. Additionally, the wafer-transferring fabrication could keep the sensitive diaphragm of microphone after dicing and package. The sensitivity of electret condenser microphone depends on the electrical sensitivity and the mechanical sensitivity of the diaphragm. The high mechanical sensitivity can be determined by the mechanical properties of the diaphragm. In order to obtain high sensitive microphones, the properties of low tensile stress and larger area of the diaphragms were fabricated. The diameter and thickness of the diaphragm are 1900 µm and 1.05 µm, respectively. The response of microphone is -38.1 dBV/Pa, (@1 kHz, bias voltage of -304 V). It is corresponding to the sensitivity of 12.45 mV/Pa . The response of STAR microphone and KNOWLES microphone both are -44 dBV/Pa. It is corresponding to the sensitivity of 6.3 mV/Pa. The result of this thesis is better than that of the commercial product.
URI: http://hdl.handle.net/11455/4147
其他識別: U0005-2208200717463800
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2208200717463800
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