Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4151
標題: 介電保護層對氮化鎵發光二極體特性之影響研究
Effects of Passivation Layers on Characteristics of GaN-Based Light-Emitting Diodes
作者: 林中一
Lin, Chung-Yi
關鍵字: GaN
氮化鎵
LED
SiO2
SiNx
Passivation Layer
發光二極體
二氧化矽
氮化矽
介電保護層
出版社: 精密工程學系所
引用: [1] E. Fred Schubert, “Light-Emitting Diodes,” Cambridge University Press. UK, pp. 1-19, 2003. [2] G.. B. Stringfellow, “High Brightness Light Emitting Diode,” Academic Press Inc. Boston, pp. 149-219, 1997. [3] S. M. Sze, “Semiconductor Devices Physici and Technology,” 2nd Edition, Wiley, Taiwan, pp.88-92, 2001. [4] D. A. Neamen, “Semiconductor Physics & Devices:Basic Principles,” Third Edition, McGraw-Hill, pp. 268-275. 2002. [5] 耿繼業, 何建娃, “幾何光學,”全華科技, 台北, 台灣, pp.38-49, 2001. [6] 史光國, “現代半導體發光及雷射二極體材料技術,” 全華科技,台北,台灣, pp. 3-57~4-10, 2001. [7] 江家雯, “LED’s Bright Feature,” 工業技術研究院, 工業技術與資訊174期, pp. 10-11, 2006. [8] D. S. Wuu, W .K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, J. S. Fang, “Enhanced Output Power of Near-Ultraviolet InGaN - GaN LEDs Grown on Patterned Sapphire Substrates,” IEEE Photon. Technol. Lett., Vol. 17, pp. 288-290, Feb. 2005. [9] J. Baur, B. Hahn, M. Fehrer, D. Eisert, W. Stein, A. Plossl, F. Kuhn, H. Zull, M. Winter, V. Harle, “InGaN on SiC LEDs for High Flux and High Current Applications,” Phys. Stat. Sol. Vol. 194, pp. 399-402, 2002. [10] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern, S. A. Stockman, “High-Power AlGaInN Flip-Chip Light-Emitting Diodes,” App. Phys. Lett., Vol. 78, pp. 3379-3381, May. 2001. [11] 蔡國強、謝嘉民、戴寶通、歐耿良,以高密度電漿化學氣相沈積系統製程非晶相氫化碳化矽膜之研究,毫微米通訊第九卷第一期,pp. 6-11,2001. [12] C. Dominguez, Jose A. Rodriguez, Francisco J. Munoz, Nadia Zine, “The Effect of Rapid Thermal Annealing on Properties of Plasma Enhanced CVD Silicon Oxide Films,” Thin Solid Films, Vol. 346, pp. 202-206, 1999. [13] M. I. Alayo, I. Pereyra, W. L. Scopel, M. C. AFantini, “On the Nitrogen And Oxygen Incorporation In Plasmsa Chemical Vapor Deposition (PECVD) SiOxNy films,” Thin Solid Films, Vol. 402, pp. 154-161, 2002. [14] K. M. Chang, C. C. Lang, C. C. Cheng, “The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation,” Phys. Stat. Sol. Vol. 188, No. 1, pp. 175-178, 2001. [15] Y. Park, S. Rhee, “Low Temperature Silicon Dioxide Film Deposition by Remote Plasma Enhanced Chemical Vapor Deposition:Growth Mechanism,” Surface and Coatings Technology, Vol. 179, pp. 229-236, 2004. [16] K. Maeda, N. Sakamoto, I. Umezu, “A Comparative Study on Structural and Electronic Properties of PECVD a-SiOx with SiNx,” Journal of Non-Crystalline Solids, Vol. 187, pp. 287-290, 1995. [17] H. Lin, L. Xu, X. Chen, X. Wang, M. Sheng, F. Stubhan, K. Merkel, J. Wilde, “Moisture-resistant properties of SiNx films prepared by PECVD,” Thin Solid Films, Vol. 333, pp. 71-76, 1998. [18] J. Isenberg, S. Reber, W. Warta, “Diffusion Properties of Ion-Implanted Vanadium in PECVD-SiO2 and PECVD-SiNx,” Journal of The Electrochemical Society, Vol. 150, pp. 360-370, 2003. [19]W. Hunag, X. Wang, M. Sheng, L. Xu, F. Stubhan, L. Luo, T. Feng, X. Wang, F. Zhang, S. Zou, “Low Temperature PECVD SiNx Films Applied in OLED Packagin,” Materials Science and Engineering B98, pp. 248-254, 2003.
摘要: 氮化矽與二氧化矽是兩種在IC半導體中廣泛被應用的介電材料,本論文係利用電漿輔助化學氣相沉積法在氮化鎵發光二極體(GaN LED)上來沉積介電保護層,介電保護層不只能夠保護元件,更能將發光二極體因電子、電洞所複合所放射的光子,經由介電保護層的光學作用降低全反射,使光子順利導出至空氣中,進而提昇發光二極體的外部量子效率。本論文針對氮化鎵發光二極體的介電保護層做兩個方面的探討,分別為 (1)介電保護層厚度與(2)不同介電保護層材料。本論文採用波長460 nm之氮化鎵發光二極體,使用不同的沉積條件得到氮化矽膜的折射率分別為1.81、1.86、1.99、2.03,而二氧化矽膜折射率則為1.46,以這些數據做為Trace Pro光學模擬軟體之設定參數,當模擬發光二極體裸晶粒時,二氧化矽有40%的光線取出效率,而模擬經上膠封裝之發光二極體時,當氮化矽折射率設為1.81時,光線取出效率可達到最佳值為61.4%。 在實驗結果方面,在工作電流20 mA下,發光二極體裸晶粒在二氧化矽保護層厚度為2000 Å時會有最佳的光輸出功率10.29 mW;而封裝後之發光二極體時在氮化矽保護層厚度為500 Å時會有最佳的光輸出功率18.7 mW。相較之下,無介電保護層之氮化鎵發光二極體,裸晶粒之光輸出功率為8.05 mW,而封裝後之光輸出功率為14.66 mW。經由壽命測試結果顯示,在注入電流20 mA,504個小時後,有介電保護層保護之發光二極體,在漏電流與亮度的衰減都能保持在1 μA與20%以下。這些結果顯示介電保護層除了保護氮化鎵發光二極體的之外,更具有提高外部取光效率及延長元件壽命的實用性。
Dielectric thin-film materials such as SiNx and SiO2 are widely used in the semiconductor industry. In this thesis, the dielectric passivation layers deposited by plasma-enhanced chemical vapor deposition were attempted to protect the GaN light-emitting diodes (LEDs) and to enhance the light extraction efficiency. The effects of refractive index and thickness of the passivation layers on the performance of GaN LEDs (λp=460 nm) are investigated and discussed. The refractive index of the SiNx film used in this study was measured to be 1.81, 1.86, 1.99, and 2.03 while 1.46 for the SiO2 film. Based on these data and Trace Pro simulation, the LED bare chip with an optimum SiO2 thickness can achieve 40% light extraction efficiency. Furthermore, the LED bare chip with an optimum SiNx thickness (n=1.81) after epoxy package can achieve the light extraction efficiency of 61.4%. Under a 20-mA current injection, the output power of the LED chip with a 2000-Å thick SiO2 can reach 10.29 mW. For the lamp package sample, the output power can reach 18.7 mW using a 1500-Å-thick SiNX passivation layer. In contrast, the output powers of the GaN LED bare chip and lamp samples without any passivation showed only 8.05 and 14.66 mW, respectively. A prime concern of the passivation layer on GaN LED is their reliability issues. It was found that the passivated GaN LED samples can maintain the forward voltage (Vf) and leakage current (Ir) performance with the degradation below 20% and 1 μA, respectively (after 504 hours). These results indicate that the reliability and the light extraction efficiency of the GaN LED can be improved using the chip passivation technique.
URI: http://hdl.handle.net/11455/4151
其他識別: U0005-2507200710591900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2507200710591900
Appears in Collections:精密工程研究所

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