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標題: 以磊晶膜移轉技術研製具銅基板之氮化鎵發光二極體
Investigation of GaN Light-Emitting Diodes With Cu Substrates By Epilayers Transferring Technique
作者: 曹勝凱
Tsao, Sheng-Kai
關鍵字: GaN
light-emitting diode (LED)
laser lift-off
precision electroplate
出版社: 精密工程學系所
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摘要: 本論文主要是利用基板轉移技術研製氮化鎵發光二極體,並探討其元件的特性。我們使用雷射剝離技術來剝離氮化鎵元件的藍寶石基板,並搭配精密電鍍技術,將剝離的氮化鎵薄膜轉移到金屬銅基板上,製作p型在上的氮化鎵/鏡面/銅基板結構發光二極體。在此將傳統氮化鎵/藍寶石、氮化鎵/藍寶石/金屬鋁結構、氮化鎵/鋁鏡面/銅結構與氮化鎵/銀鏡面/銅結構作一比較,在350 mA電流下,則分別為4.53 V、4.55 V、4.11 V以及4.12 V,顯示出元件的操作電壓在氮化鎵/鋁鏡面/銅結構與氮化鎵/銀鏡面/銅結構下明顯變小。另外,350 mA下氮化鎵/藍寶石、氮化鎵/藍寶石/金屬鋁、氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構發光強度分別為1555.9 mcd、2238.6 mcd、2379.5 mcd以及2592.3 mcd,氮化鎵/藍寶石/鋁鏡面、氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構發光強度分別比傳統的氮化鎵/藍寶石高出1.44、1.53以及1.67倍,而氮化鎵/藍寶石以及氮化鎵/藍寶石/金屬鋁的結構發光強度會先到達飽和狀態,但是氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構隨著電流增加,其發光強度也隨著線性增加,由此可知氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構在大電流下的穩定性相當好,在置換成銅基板結構後的氮化鎵發光二極體,因銅基板有良好的散熱特性,因此會有較佳的熱效應容忍特性。
A GaN/mirror/Cu LED fabricated using the laser lift-off and electroplating is demonstrated. The UV laser was first employed to separate the p-side-up device from the sapphire substrate and then the device was electroplated by a thick copper film. The forward voltage (@350 mA) of the original GaN/sapphire, GaN/sapphire/Al, GaN/Al/Cu and GaN/Ag/Cu LED sample were 4.53 V, 4.55 V, 4.11 V and 4.12 V, respectively. The result indicated that the forward voltages of GaN/Al/Cu and GaN/Ag/Cu LEDs are lower than the other two LED structures with sapphire substrate. The corresponding luminance intensity of the p-side-up GaN/sapphire, GaN/sapphire/Al, GaN/Al/Cu and GaN/Ag/Cu are 1555.9 mcd, 2238.6 mcd, 2379.5 mcd and 2592.3 mcd (@350 mA). The luminance intensity of the p-side-up GaN/sapphire/Al, GaN/Al/Cu and GaN/Ag/Cu LED increases 1.44 times, 1.53 times and 1.67 times as compared with that of the original GaN/sapphire LED(@350 mA). The luminance intensity of the GaN/sapphire and GaN/sapphire/Al presents the early saturation, but that of the GaN/Al/Cu and GaN/Ag/Cu structure linearly increases with electric current. The stability of GaN/Al/Cu and GaN/Ag/Cu structure is quite well under high current. It is due to GaN light-emitting diodes with the copper substrate provide a good heat sink and thermal management.
其他識別: U0005-2708200709165700
Appears in Collections:精密工程研究所



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