Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/41561
標題: Interfacial reactions between eutectic SnZn solder and bulk or thin-film cu substrates
作者: Chen, C.M.
陳志銘
Chen, C.H.
關鍵字: interfacial reaction
eutectic SnZn solder
bulk Cu
thin-film Cu
intermetallic compounds
bump metallization
snpb solder
zn solder
ni
growth
couples
microstructure
kinetics
joints
期刊/報告no:: Journal of Electronic Materials, Volume 36, Issue 10, Page(s) 1363-1371.
摘要: Interfacial reactions between eutectic SnZn solder and bulk or thin-film Cu substrates are investigated and compared.. The thicknesses of bulk and thin-film Cu substrates are 0.5 mm and 4,000 A, respectively. Different dominant reaction products and interfacial microstructures are observed in these two types of interfacial reactions. In the bulk Cu type, the Cu5Zn8 phase is the dominant reaction product under reflow and solid-state annealing. However, the CuZn5 phase becomes the dominant reaction product in the thin-film Cu type. The Cu5Zn8 phase in the bulk Cu type remains as a uniform microstructure after reflow. After solid-state annealing, however, the Cu(5)Zns phase fractures and the Cu6Sn5 and Cu3Sn phases are formed at the Cu5Zn8/Cu interface. The CuZn5 phase in the thin-film Cu type ripens after reflow and the phase morphology is transformed from a uniform layer into separated scallops. In situ observation of the interfacial microstructure after solid-state annealing reveals that prominent deformation occurs in the solder region close to the interface in the bulk Cu type. While in the thin-film Cu type, the CuZn5 grain is extruded out of the interface.
URI: http://hdl.handle.net/11455/41561
ISSN: 0361-5235
文章連結: http://dx.doi.org/10.1007/s11664-007-0226-1
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