Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/41765
標題: Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method
作者: Cheng, W.T.
鄭文桐
Li, H.C.
Huang, C.N.
關鍵字: simulation
optimization
CFD
thermal CVD
silicon
Taguchi method
chemical-vapor-deposition
mathematical-model
transport phenomena
fluid-mechanics
reactors
chemistry
silane
期刊/報告no:: Chemical Engineering Journal, Volume 137, Issue 3, Page(s) 603-613.
摘要: A steady laminar flow coupled with heat transfer, gas-phase chemistry, and surface chemistry model, was numerically solved for optimization of thermal chemical vapor deposition (CVD) from a gas mixture of silane and helium in the axis-symmetrical rotating/stagnating reactor with and without a rotational showerhead. At first, through computational fluid dynamics (CFD), the rate of deposited silicon on substrate was calculated and validated with the benchmark solutions from the literature. The computational model was then integrated with the dynamic model of Taguchi method to optimize the process parameters formulating a correlation to minimize thickness deviation of deposited silicon film oil the substrate in the different sizes. In particular, the result shows thickness deviation of deposited silicon film can be reduced to 5.8% and 11% from 18% and 36% over a wafer in the diameters of 0.15 m and 0.3 m, respectively, in the thermal CVD process with the optimal conditions ill this work. (C) 2007 Published by Elsevier B.V.
URI: http://hdl.handle.net/11455/41765
ISSN: 1385-8947
文章連結: http://dx.doi.org/10.1016/j.cej.2007.05.042
Appears in Collections:化學工程學系所

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